SCHEMBL60437

SCHEMBL60437

O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
CA2 P00918 18/20 0.39
CA1 P00915 17/20 0.39
MMP1 P03956 3/20 0.38
MMP2 P08253 3/20 0.38
MMP9 P14780 3/20 0.38
MMP8 P22894 3/20 0.38
MMP13 P45452 3/20 0.38
GPR3 P46089 1/20 0.34
PTPN1 P18031 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4535202 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL5567499 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
Perflubutane SCHEMBL6325042 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL546546 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL60137 1.00 CA2 (0.39) CA2CA1MMP1MMP2MMP9
SCHEMBL51399 0.98 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL1482705 0.98 CA2 (0.38) CA2CA1MMP1MMP2MMP9
SCHEMBL6117378 0.97 CA2 (0.37) CA2CA1MMP1MMP2MMP9
Trifluoromethanesulfonic Acid SCHEMBL3413696 0.95 GPR3 (0.40) CA2CA1MMP1MMP2MMP9
SCHEMBL7569683 0.94 CA1 (0.35) CA2CA1MMP1MMP2MMP9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8759415-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-06-24 US claimed
US-20120291668-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-11-22 US claimed
US-8262961-B2 Aromatic vinyl ether based reverse-tone step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-09-11 US claimed
US-8128832-B2 Processes and materials for step and flash imprint lithography INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2012-03-06 US claimed
US-20080174051-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-24 US claimed
US-20080169268-A1 PROCESSES AND MATERIALS FOR STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2008-07-17 US claimed
US-7358029-B2 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-04-15 US claimed
US-20070298176-A1 AROMATIC VINYL ETHER BASED REVERSE-TONE STEP AND FLASH IMPRINT LITHOGRAPHY GLOBALFOUNDRIES INC. (KY) 2007-12-27 US claimed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US claimed
US-20070051697-A1 Processes and materials for step and flash imprint lithography GLOBALFOUNDRIES INC. (KY) 2007-03-08 US claimed
CN-122085598-A Composition, patterning method, formed pattern, semiconductor device and application thereof 2026-05-26 CN disclosed
CN-122085599-A Composition, patterning method, formed pattern, semiconductor device and application thereof 2026-05-26 CN disclosed
CN-111458979-B Photoresist composition, preparation method and application thereof 潍坊星泰克微电子材料有限公司 2024-04-19 CN disclosed
CN-113253569-A Small molecule composition, photoresist composition and method for forming pattern on substrate 上海邃铸科技有限公司 2021-08-13 CN disclosed
US-10831102-B2 Photoactive polymer brush materials and EUV patterning using the same INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2020-11-10 US disclosed
US-20060063103-A1 Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-03-23 US disclosed
US-20050239001-A1 use of a high activation energy chemically amplified photoresist (CARS) that is contacted with a low pH high saturation magnetic moment plating solution to form a magnetic head component that is essentially free of plating defects HITACHI GLOBAL STORAGE NETHERLANDS B.V. (NL) 2005-10-27 US disclosed
US-20050123852-A1 Method for patterning a low activation energy photoresist GLOBALFOUNDRIES U.S. INC. 2005-06-09 US disclosed
US-20050124774-A1 Low activation energy photoresists INTERNATIONAL BUSINESS MACHINES CORPORATION 2005-06-09 US disclosed
US-20050112382-A1 Molecular photoresists containing nonpolymeric silsesquioxanes INTERNATIONAL BUSINESS MACHINES CORPORATION 2005-05-26 US disclosed