Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | HSD11B1 | P28845 | 18/20 | 0.44 |
| ▸ | HSD11B2 | P80365 | 1/20 | 0.39 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.34 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18845355 | 0.86 | HSD11B1 (0.42) | HSD11B1HSD11B2EPHX2 | |
| SCHEMBL13553287 | 0.86 | HSD11B1 (0.39) | HSD11B1HSD11B2EPHX2 | |
| SCHEMBL12240741 | 0.85 | HSD11B1 (0.33) | HSD11B1 | |
| SCHEMBL13430021 | 0.83 | HSD11B1 (0.43) | HSD11B1HSD11B2EPHX2 | |
| SCHEMBL10167910 | 0.83 | — | — | |
| SCHEMBL13219533 | 0.83 | DGAT1 (0.42) | HSD11B1HSD11B2 | |
| SCHEMBL9924495 | 0.83 | HSD11B1 (0.47) | HSD11B1HSD11B2 | |
| SCHEMBL18251506 | 0.83 | HSD11B1 (0.46) | HSD11B1 | |
| SCHEMBL12824509 | 0.82 | HSD11B1 (0.43) | HSD11B1HSD11B2EPHX2 | |
| SCHEMBL14732672 | 0.82 | HSD11B1 (0.39) | HSD11B1HSD11B2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 198 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | JSR CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-20230261257-A1 | INORGANIC SOLID ELECTROLYTE-CONTAINING COMPOSITION, SHEET FOR ALL-SOLID STATE SECONDARY BATTERY, AND ALL-SOLID STATE SECONDARY BATTERY, AND MANUFACTURING METHODS FOR SHEET FOR ALL-SOLID STATE SECONDARY BATTERY AND ALL-SOLID STATE SECONDARY BATTERY | FUJIFILM CORPORATION (JP) | 2023-08-17 | — | — | US | disclosed |
| US-20230244143-A9 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-08-03 | — | — | US | disclosed |
| US-20230236501-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | JSR CORPORATION (JP) | 2023-07-27 | — | — | US | disclosed |
| US-20230152691-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-05-18 | — | — | US | disclosed |
| US-9904172-B2 | Shrink material and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20180028983-A1 | METHOD FOR PURIFYING LIQUID, METHOD FOR PRODUCING CHEMICAL SOLUTION OR CLEANING SOLUTION, FILTER MEDIUM, AND FILTER DEVICE | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-02-01 | — | — | US | disclosed |
| US-9874816-B2 | Radiation-sensitive resin composition and resist pattern-forming method | JSR CORPORATION (JP) | 2018-01-23 | — | — | US | disclosed |
| US-20170363961-A9 | RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2017-12-21 | — | — | US | disclosed |
| US-9790166-B2 | Polymer, monomer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-10-17 | — | — | US | disclosed |
| US-7291441-B2 | Positive resist composition and pattern forming method utilizing the same | FUJIFILM CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-7291441-B2 | Positive resist composition and pattern forming method utilizing the same | FUJIFILM CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-7255971-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-08-14 | — | — | US | disclosed |
| US-7255971-B2 | Positive resist composition | FUJIFILM CORPORATION (JP) | 2007-08-14 | — | — | US | disclosed |
| US-20070184382-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-08-09 | — | — | US | disclosed |
| US-20070149702-A1 | Resin suitable for an acid generator and a chemically amplified positive resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED | 2007-06-28 | — | — | US | disclosed |
| US-20070117252-A1 | Silicon-containing antireflective coating forming composition, silicon-containing antireflective coating, substrate processing intermediate, and substrate processing method | SHIN-ETSU CHEMICAL CO., LTD. | 2007-05-24 | — | — | US | disclosed |
| US-7195856-B2 | Positive resist composition and pattern formation method using the same | FUJIFILM CORPORATION (JP) | 2007-03-27 | — | — | US | disclosed |
| US-20070026341-A1 | Resist protective coating material and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-02-01 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230236501-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND COMPOUND | RER1, RAD51, RAD1 | HSD11B1 2572/4885HSD11B2 3424/4885EPHX2 1666/4885 |
| US-20230400767-A1 | RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMER, AND COMPOUND | RER1, RAD51, RFT1 | HSD11B1 3401/4885HSD11B2 4323/4885EPHX2 1825/4885 |
| US-20230152691-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | CHRM1, CHRM2, H1-0 | HSD11B1 728/4885HSD11B2 695/4885EPHX2 1544/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.