SCHEMBL5560730

SCHEMBL5560730

CCOC(C)Oc1ccc(C(C)(c2ccc(OC(C)OCC)cc2)c2ccc(C(C)(C)c3ccc(C(C)OCC)cc3)cc2)cc1

nearest known ligand 0.32

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTB4R Q15722 1/20 0.32
LTB4R2 Q9NPC1 1/20 0.32
PSMB1 P20618 1/20 0.31
PSMB5 P28074 1/20 0.31
PSMB2 P49721 1/20 0.31
HIF1A Q16665 2/20 0.31
HTT P42858 2/20 0.31
TP53 P04637 2/20 0.31
MAPT P10636 2/20 0.31
HPGD P15428 2/20 0.31
TSHR P16473 2/20 0.31
MEN1 O00255 2/20 0.31
KMT2A Q03164 2/20 0.31
CYP1A2 P05177 1/20 0.31
ALDH1A1 P00352 1/20 0.31
PPARG P37231 1/20 0.31
SMN1; SMN2 Q16637 2/20 0.30
KDM4E B2RXH2 1/20 0.30
GAA P10253 1/20 0.30
AR P10275 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15869162 0.91 PSMB1 (0.36) PSMB1PSMB5PSMB2HIF1AHTT
SCHEMBL196326 0.87 LMNA (0.39) PSMB1PSMB5PSMB2HIF1AHTT
SCHEMBL1456662 0.87 LMNA (0.39) MAPTKMT2AALDH1A1
SCHEMBL13717573 0.80 ESR1 (0.50) HIF1AHTTHPGDTSHRMEN1
SCHEMBL4060025 0.77 NR1H4 (0.42) TP53MAPTHPGDTSHRMEN1
SCHEMBL6272807 0.77 LMNA (0.33) TSHRALDH1A1PPARG
SCHEMBL13224550 0.76 HTT (0.34) PSMB1PSMB5PSMB2HIF1AHTT
SCHEMBL3852488 0.74 LMNA (0.52) TSHRKMT2A
SCHEMBL825332 0.74 NPC1 (0.49) MAPT
SCHEMBL22882724 0.74 LMNA (0.37) LTB4RLTB4R2HIF1AMEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8178639-B2 Polymer for forming organic anti-reflective coating layer DONGJIN SEMICHEM CO., LTD. (KR) 2012-05-15 US disclosed
US-8026042-B2 Polymer for organic anti-reflective coating layer and composition including the same DONGJIN SEMICHEM CO., LTD. (KR) 2011-09-27 US disclosed
US-8026042-B2 Polymer for organic anti-reflective coating layer and composition including the same DONGJIN SEMICHEM CO., LTD. (KR) 2011-09-27 US disclosed
US-20110003478-A1 POLYMER FOR ORGANIC ANTI-REFLECTIVE COATING LAYER AND COMPOSITION INCLUDING THE SAME KIM SANG-JEOUNG 2011-01-06 US disclosed
US-20110003478-A1 POLYMER FOR ORGANIC ANTI-REFLECTIVE COATING LAYER AND COMPOSITION INCLUDING THE SAME KIM SANG-JEOUNG 2011-01-06 US disclosed
US-20100266967-A1 POLYMER FOR FORMING ORGANIC ANTI-REFLECTIVE COATING LAYER DONGJIN SEMICHEM CO., LTD (KR) 2010-10-21 US disclosed
US-7629110-B2 polyethersiloxane copolymers used as photoresists for forming semiconductor circuit patterns, using photolithography DONGJIN SEMICHEM CO., LTD. (KR) 2009-12-08 US disclosed
US-7465531-B2 Copolyalkylene oxide of optionally substituted alkyl 1,2-epoxypropionate and 9-anthracenylmethyl 2,3-epoxypropionate; between etching layer and photoresist to absorb exposure light in photolithography; prevents the occurrence of standing wave, undercutting and notching to obtain uniform pattern profile DONGJIN SEMICHEM CO., LTD. (KR) 2008-12-16 US disclosed
US-20080131815-A1 polyethersiloxane copolymers used as photoresists for forming semiconductor circuit patterns, using photolithography DONGJIN SEMICHEM CO., LTD. (KR) 2008-06-05 US disclosed
US-7368219-B2 Polymer for forming anti-reflective coating layer DONGJIN SEMICHEM CO., LTD. (KR) 2008-05-06 US disclosed