SCHEMBL825332

SCHEMBL825332

CCOC(C)Oc1ccc(C(C)(C)CC)cc1

nearest known ligand 0.49

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 2/20 0.49
RAB9A P51151 2/20 0.49
MAPT P10636 1/20 0.49
HRH3 Q9Y5N1 16/20 0.40
MAOB P27338 11/20 0.40
POLB P06746 1/20 0.38
CYP2C9 P11712 1/20 0.38
LMNA P02545 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL825502 0.87 NPC1 (0.46) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL16591156 0.87 NPC1 (0.46) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL24564756 0.87 CYP3A4 (0.47) NPC1RAB9AMAPTHRH3LMNA
SCHEMBL196326 0.86 LMNA (0.39) NPC1RAB9AMAPTPOLBLMNA
SCHEMBL26868328 0.86 NPC1 (0.51) NPC1RAB9AMAPTHRH3MAOB
SCHEMBL1456662 0.86 LMNA (0.39) NPC1RAB9AMAPTLMNA
SCHEMBL4060025 0.86 NR1H4 (0.42) NPC1RAB9AMAPTLMNA
SCHEMBL3852488 0.83 LMNA (0.52) POLBLMNA
SCHEMBL12425736 0.83 LMNA (0.37) NPC1RAB9AMAPTLMNA
SCHEMBL12807710 0.82 NPC1 (0.55) NPC1RAB9AMAPTHRH3MAOB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-20230161253-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-05-25 US disclosed
US-9929376-B2 Laminate, kit for manufacturing organic semiconductor, and resist composition for manufacturing organic semiconductor FUJIFILM CORPORATION (JP) 2018-03-27 US disclosed
US-9810984-B2 Photosensitive transfer material, pattern formation method, and etching method FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-20170199458-A1 PATTERN FORMING METHOD, ETCHING METHOD AND METHOD FOR PRODUCING CAPACITANCE-TYPE INPUT DEVICE FUJIFILM CORPORATION (JP) 2017-07-13 US disclosed
US-9546133-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2017-01-17 US disclosed
US-20160291468-A1 PHOTOSENSITIVE TRANSFER MATERIAL, PATTERN FORMATION METHOD, AND ETCHING METHOD FUJIFILM CORPORATION (JP) 2016-10-06 US disclosed
US-20160240816-A1 LAMINATE, KIT FOR MANUFACTURING ORGANIC SEMICONDUCTOR, AND RESIST COMPOSITION FOR MANUFACTURING ORGANIC SEMICONDUCTOR FUJIFILM CORPORATION (JP) 2016-08-18 US disclosed
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER MARUZEN PETROCHEMICAL CO., LTD. 2016-01-28 US disclosed
US-9223211-B2 Photosensitive resin compositions, processes for preparing cured films, the resulting cured films, organic EL display devices and liquid crystal display devices FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-20090233223-A1 SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-17 US disclosed
US-7510822-B2 Stimulation sensitive composition and compound FUJIFILM CORPORATION (JP) 2009-03-31 US disclosed
US-7435527-B2 Mixture of acid generator and resin insoluble in alkaline developer and another acid decomposable compound FUJIFILM CORPORATION (JP) 2008-10-14 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080241749-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
EP-1975715-A2 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2008-10-01 EP disclosed
US-7335454-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2008-02-26 US disclosed
US-7326513-B2 Positive working resist composition FUJIFILM CORPORATION (JP) 2008-02-05 US disclosed
US-7235341-B2 Positive resist composition FUJIFILM CORPORATION (JP) 2007-06-26 US disclosed
US-7214467-B2 Photosensitive resin composition FUJIFILM CORPORATION (JP) 2007-05-08 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER ORAI1, STOM, SORT1 NPC1 1947/4885RAB9A 996/4885MAPT 3433/4885
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER HAAO, HPD, IL4 NPC1 3019/4885RAB9A 4056/4885MAPT 2052/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.