SCHEMBL4060025

SCHEMBL4060025

CCOC(C)Oc1ccc(C(C)(C)C)cc1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NR1H4 Q96RI1 2/20 0.42
ALDH1A1 P00352 2/20 0.40
MAPK1 P28482 2/20 0.40
MAPT P10636 2/20 0.40
NPC1 O15118 1/20 0.40
HPGD P15428 1/20 0.40
RAB9A P51151 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
LMNA P02545 4/20 0.39
CA1 P00915 1/20 0.38
CA2 P00918 1/20 0.38
CA9 Q16790 1/20 0.38
APP P05067 1/20 0.38
EPHX2 P34913 1/20 0.37
HSD17B10 Q99714 2/20 0.37
TDP1 Q9NUW8 2/20 0.37
ALOX15 P16050 1/20 0.37
APEX1 P27695 1/20 0.37
RECQL P46063 1/20 0.37
TSHR P16473 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL196326 0.89 LMNA (0.39) NR1H4ALDH1A1MAPTNPC1HPGD
SCHEMBL1456662 0.89 LMNA (0.39) NR1H4ALDH1A1MAPTNPC1RAB9A
SCHEMBL3852488 0.86 LMNA (0.52) LMNATDP1TSHRKMT2AL3MBTL1
SCHEMBL12425736 0.86 LMNA (0.37) NR1H4MAPTNPC1RAB9ALMNA
SCHEMBL825332 0.86 NPC1 (0.49) MAPTNPC1RAB9ALMNA
SCHEMBL15869162 0.84 PSMB1 (0.36) NR1H4ALDH1A1MAPTNPC1HPGD
SCHEMBL24564756 0.83 CYP3A4 (0.47) ALDH1A1MAPTNPC1RAB9ASMN1; SMN2
SCHEMBL13717573 0.82 ESR1 (0.50) ALDH1A1HPGDSMN1; SMN2LMNAHSD17B10
SCHEMBL6272807 0.82 LMNA (0.33) NR1H4ALDH1A1MAPK1LMNATDP1
SCHEMBL4065843 0.81 ESR1 (0.37) ALDH1A1MAPK1MAPTNPC1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11815815-B2 Composition for forming silicon-containing resist underlayer film removable by wet process NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-11-14 US disclosed
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2023-04-27 US disclosed
US-20200209749-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-07-02 US disclosed
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-06-28 US disclosed
US-20170371242-A1 COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM REMOVABLE BY WET PROCESS NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-12-28 US disclosed
US-20170271151-A1 COATING COMPOSITION FOR PATTERN REVERSAL ON SOC PATTERN NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-09-21 US disclosed
US-9524871-B2 Silicon-containing resist underlayer film-forming composition having sulfone structure NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-12-20 US disclosed
US-9291900-B2 Composition for forming resist underlayer film, containing silicon that bears diketone-structure-containing organic group NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2016-03-22 US disclosed
US-20150249012-A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON CONTAINING CYCLIC ORGANIC GROUP HAVING HETERO ATOM NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2015-09-03 US disclosed
US-20140377957-A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SILICON-CONTAINING RESIST UNDERLAYER FILM FORMING COMPOSITION FOR SOLVENT DEVELOPMENT NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-12-25 US disclosed
US-20140170855-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING SULFONE STRUCTURE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2014-06-19 US disclosed
US-20130302991-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, CONTAINING SILICON THAT BEARS DIKETONE-STRUCTURE-CONTAINING ORGANIC GROUP NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2013-11-14 US disclosed
US-7534547-B2 Optically active compound and photosensitive resin composition OSAKA GAS COMPANY LIMITED (JP) 2009-05-19 US disclosed
US-7534547-B2 Optically active compound and photosensitive resin composition OSAKA GAS COMPANY LIMITED (JP) 2009-05-19 US disclosed
US-7202015-B2 Positive photoresist composition and pattern making method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-04-10 US disclosed
EP-1375463-A1 OPTICALLY ACTIVE COMPOUND AND PHOTOSENSITIVE RESIN COMPOSITION Kansai Research Institute, Inc. (JP) 2004-01-02 EP disclosed
US-20030211421-A1 Optically active compound and photosensitive resin composition KRI, INC. (JP) 2003-11-13 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200209749-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN HACL2, NEK10, ACAD10 NR1H4 441/4885ALDH1A1 1837/4885MAPK1 3812/4885
US-20030211421-A1 Optically active compound and photosensitive resin composition ARCN1, RAD51, PAM NR1H4 3632/4885ALDH1A1 1552/4885MAPK1 428/4885
US-20180181000-A1 RADIATION SENSITIVE COMPOSITION RER1, RAD1, RAD51 NR1H4 2459/4885ALDH1A1 1670/4885MAPK1 2769/4885
US-20230125270-A1 RADIATION SENSITIVE COMPOSITION XRCC6, RAD50, XRCC5 NR1H4 729/4885ALDH1A1 1388/4885MAPK1 1253/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.