Propionic Acid

Propionic Acid

SCHEMBL5571744

CCC(=O)[O-].CCC[N+](C)(CCC)CCC

nearest known ligand 0.58

Full drug profile on Sugi Atlas →

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
BBOX1 O75936 8/20 0.46
FFAR3 O14843 2/20 0.43
HDAC3 O15379 2/20 0.43
HDAC1 Q13547 2/20 0.43
HDAC2 Q92769 2/20 0.43
HDAC8 Q9BY41 2/20 0.43
CA1 P00915 1/20 0.39
CES2 O00748 1/20 0.35
CES1 P23141 1/20 0.35
SLC22A16 Q86VW1 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Bicarbonate SCHEMBL31088022 0.86 BBOX1 (0.43) BBOX1FFAR3HDAC3HDAC1HDAC2
Acetic Acid SCHEMBL557807 0.86 CA1 (0.44) BBOX1FFAR3HDAC3HDAC1HDAC2
Oxalic Acid SCHEMBL1050654 0.86 BBOX1 (0.43) BBOX1FFAR3HDAC3HDAC1HDAC2
Butyric Acid SCHEMBL5573636 0.85 FFAR3 (0.67) BBOX1FFAR3HDAC3HDAC1HDAC2
Tributylmethylammonium SCHEMBL5570476 0.85 BBOX1 (0.54) BBOX1FFAR3HDAC3HDAC1HDAC2
Propionic Acid SCHEMBL5573582 0.84 BBOX1 (0.45) BBOX1FFAR3HDAC3HDAC1HDAC2
Propionic Acid SCHEMBL5571651 0.83 BBOX1 (0.52) BBOX1CA1CES2CES1
Oxalic Acid SCHEMBL1050657 0.82 BBOX1 (0.40) BBOX1FFAR3HDAC3HDAC1HDAC2
Propionic Acid SCHEMBL5570474 0.81 BBOX1 (0.50) BBOX1CES2CES1
Propionic Acid SCHEMBL5575042 0.81 BBOX1 (0.50) BBOX1CES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070135565-A1 COMPOSITION FOR FORMING POROUS FILM, POROUS FILM AND METHOD FOR FORMING THE SAME, INTERLEVEL INSULATOR FILM, AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2007-06-14 US disclosed
US-7132473-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2006-11-07 US disclosed
EP-1568744-A1 COMPOSITION FOR POROUS FILM FORMATION, POROUS FILM, PROCESS FOR PRODUCING THE SAME, INTERLAYER INSULATION FILM AND SEMICONDUCTOR DEVICE MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-08-31 EP disclosed
US-20040219372-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 2004-11-04 US disclosed