SCHEMBL5583368

SCHEMBL5583368

O=C(OC(c1ccccc1)[N+](=O)[O-])C(Cl)(Cl)Cl

nearest known ligand 0.38

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
GSR P00390 1/20 0.38
HTT P42858 1/20 0.37
ALDH1A1 P00352 2/20 0.36
CYP3A4 P08684 1/20 0.36
LMNA P02545 3/20 0.34
SMN1; SMN2 Q16637 2/20 0.34
CYP2D6 P10635 1/20 0.33
SRC P12931 1/20 0.33
KMT2A Q03164 1/20 0.33
MAPK1 P28482 2/20 0.32
MAPT P10636 1/20 0.32
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5604685 0.84 GSR (0.38) GSRALDH1A1CYP3A4LMNACYP2D6
SCHEMBL258789 0.81 GSR (0.41) GSRALDH1A1CYP3A4LMNASMN1; SMN2
SCHEMBL286963 0.81 GSR (0.43) GSRALDH1A1CYP3A4LMNACYP2D6
SCHEMBL22323630 0.81 GSR (0.43) GSRALDH1A1CYP3A4LMNACYP2D6
SCHEMBL5932816 0.80 GSR (0.42) GSRALDH1A1CYP3A4LMNACYP2D6
SCHEMBL10976703 0.79 GSR (0.39) GSRALDH1A1CYP3A4LMNASMN1; SMN2
SCHEMBL10640253 0.78 GSR (0.41) GSRALDH1A1CYP3A4LMNACYP2D6
SCHEMBL5932183 0.78 GSR (0.41) GSRALDH1A1CYP3A4LMNACYP2D6
SCHEMBL3299147 0.78 ALDH1A1 (0.49) GSRALDH1A1CYP3A4CYP2D6SRC
SCHEMBL38107 0.78 NPSR1 (0.43) GSRHTTALDH1A1LMNASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7301049-B2 Photolabile esters and their uses THE INSTITUTE OF CANCER RESEARCH (GB) 2007-11-27 US disclosed
EP-1239332-B1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION, METHOD OF FORMING PATTERN THEREFROM, AND METHOD OF BURNING COATING FILM THEREOF AZ ELECTRONIC MATERIALS USA (US) 2007-02-21 EP disclosed
US-20060160014-A1 Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectric NAGAHARA TATSURO 2006-07-20 US disclosed
US-20050287469-A1 Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectric NAGAHARA TATSURO 2005-12-29 US disclosed
EP-1560069-A1 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC AZ Electronic Materials (Japan) K.K. (JP) 2005-08-03 EP disclosed
EP-1548499-A1 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC AZ Electronic Materials (Japan) K.K. (JP) 2005-06-29 EP disclosed
US-6902875-B2 Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof CLARIANT FINANCE (BVI) LIMITED (VG) 2005-06-07 US disclosed
US-20040081912-A1 Photosensitive polysilazane composition and method of forming patterned polysilazane film AZ ELECTRONIC MATERIALS USA CORP. 2004-04-29 US disclosed
US-20030113657-A1 Photosensitive ploysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof MERCK PATENT GMBH (DE) 2003-06-19 US disclosed
EP-1239332-A1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION, METHOD OF FORMING PATTERN THEREFROM, AND METHOD OF BURNING COATING FILM THEREOF CLARIANT INTERNATIONAL LTD. (CH) 2002-09-11 EP disclosed
EP-1164435-A1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION AND METHOD OF FORMING PATTERNED POLYSILAZANE FILM TonenGeneral Sekiyu K.K. (JP) 2001-12-19 EP disclosed