SCHEMBL5604685

SCHEMBL5604685

O=C(OC(c1ccccc1)[N+](=O)[O-])C(F)(F)F

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
GSR P00390 1/20 0.38
ALDH1A1 P00352 2/20 0.36
CYP3A4 P08684 1/20 0.36
CES1 P23141 3/20 0.35
MAPT P10636 2/20 0.34
NPSR1 Q6W5P4 1/20 0.34
CYP2D6 P10635 1/20 0.33
SRC P12931 1/20 0.33
CES2 O00748 1/20 0.33
ACHE P22303 1/20 0.33
KMT2A Q03164 1/20 0.33
LMNA P02545 2/20 0.32
MAPK1 P28482 2/20 0.32
TDP1 Q9NUW8 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5583368 0.84 GSR (0.38) GSRALDH1A1CYP3A4MAPTCYP2D6
SCHEMBL286963 0.81 GSR (0.43) GSRALDH1A1CYP3A4CES1MAPT
SCHEMBL22323630 0.81 GSR (0.43) GSRALDH1A1CYP3A4CES1CYP2D6
SCHEMBL5932816 0.80 GSR (0.42) GSRALDH1A1CYP3A4CES1MAPT
SCHEMBL5932183 0.78 GSR (0.41) GSRALDH1A1CYP3A4CES1CYP2D6
SCHEMBL258789 0.78 GSR (0.41) GSRALDH1A1CYP3A4CES1CYP2D6
SCHEMBL3299147 0.78 ALDH1A1 (0.49) GSRALDH1A1CYP3A4CYP2D6SRC
SCHEMBL38107 0.78 NPSR1 (0.43) GSRALDH1A1MAPTNPSR1CYP2D6
SCHEMBL10640253 0.78 GSR (0.41) GSRALDH1A1CYP3A4CES1MAPT
SCHEMBL4277062 0.77 TSHR (0.50) GSRALDH1A1CYP3A4CES1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-100395662-C Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof CLARIANT INT LTD (JP) 2008-06-18 CN disclosed
EP-1239332-B1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION, METHOD OF FORMING PATTERN THEREFROM, AND METHOD OF BURNING COATING FILM THEREOF AZ ELECTRONIC MATERIALS USA (US) 2007-02-21 EP disclosed
US-20060160014-A1 Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectric NAGAHARA TATSURO 2006-07-20 US disclosed
US-20050287469-A1 Photosensitive composition for interlayer dielectric and method of forming patterned interlayer dielectric NAGAHARA TATSURO 2005-12-29 US disclosed
EP-1560069-A1 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC AZ Electronic Materials (Japan) K.K. (JP) 2005-08-03 EP disclosed
EP-1548499-A1 PHOTOSENSITIVE COMPOSITION FOR INTERLAYER DIELECTRIC AND METHOD OF FORMING PATTERNED INTERLAYER DIELECTRIC AZ Electronic Materials (Japan) K.K. (JP) 2005-06-29 EP disclosed
US-6902875-B2 Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof CLARIANT FINANCE (BVI) LIMITED (VG) 2005-06-07 US disclosed
US-20040081912-A1 Photosensitive polysilazane composition and method of forming patterned polysilazane film AZ ELECTRONIC MATERIALS USA CORP. 2004-04-29 US disclosed
US-20030113657-A1 Photosensitive ploysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof MERCK PATENT GMBH (DE) 2003-06-19 US disclosed
CN-1388920-A Photosensitive polysilazane composition, method of forming pattern therefrom, and method of burning coating film thereof CLARIANT INT LTD (CH) 2003-01-01 CN disclosed
EP-1239332-A1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION, METHOD OF FORMING PATTERN THEREFROM, AND METHOD OF BURNING COATING FILM THEREOF CLARIANT INTERNATIONAL LTD. (CH) 2002-09-11 EP disclosed
EP-1164435-A1 PHOTOSENSITIVE POLYSILAZANE COMPOSITION AND METHOD OF FORMING PATTERNED POLYSILAZANE FILM TonenGeneral Sekiyu K.K. (JP) 2001-12-19 EP disclosed