SCHEMBL5604952

SCHEMBL5604952

O=C1C=CC=CC1=O.[N-]=[N+]=NS(=O)(=O)N=[N+]=[N-]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5586196 0.83
SCHEMBL3034904 0.83 CA1 (0.33)
Benzoquinone SCHEMBL6709400 0.81 ALDH1A1 (0.40)
SCHEMBL88256 0.77
SCHEMBL7539505 0.77
SCHEMBL27601001 0.77
SCHEMBL3034902 0.77
SCHEMBL16702618 0.76 GSK3A (0.48)
Naphthoquinone SCHEMBL106247 0.75 IDO1 (0.54)
Benzene SCHEMBL8170940 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 73 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-5080998-A PROCESS FOR THE FORMATION OF POSITIVE IMAGES UTILIZING ELECTRODEPOSITION OF O-QUINONE DIAZIDE COMPOUND CONTAINING PHOTORESIST ON CONDUCTIVE SURFACE CIBA-GEIGY CORPORATION (US) 1992-01-14 US claimed
EP-0265387-A2 Method of forming images CIBA-GEIGY AG (CH) 1988-04-27 EP claimed
JP-9061998-A None JP disclosed
JP-7104467-A None JP disclosed
CN-117769684-A Resist auxiliary film composition and pattern forming method using the same 三菱瓦斯化学株式会社 2024-03-26 CN disclosed
US-11681227-B2 Enhanced EUV photoresist materials, formulations and processes IRRESISTIBLE MATERIALS LTD (GB) 2023-06-20 US disclosed
US-11543749-B2 Resist composition and method for producing resist pattern, and method for producing plated molded article SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-01-03 US disclosed
CN-115151863-A Resist composition and method of using the same 三菱瓦斯化学株式会社 2022-10-04 CN disclosed
CN-113994256-A Method for forming EUV patterned resist 亚历克斯·P·G·罗宾逊 2022-01-28 CN disclosed
US-20210278765-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN, AND METHOD FOR PRODUCING PLATED MOLDED ARTICLE SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-09-09 US disclosed
US-20200272050-A1 Enhanced EUV Photoresist Materials, Formulations and Processes IRRESISTIBLE MATERIALS, LTD (GB) 2020-08-27 US disclosed
US-5451345-A Chemical composition CIBA-GEIGY CORPORATION (US) 1995-09-19 US disclosed
EP-0662636-A2 Method of forming images CIBA-GEIGY AG (CH) 1995-07-12 EP disclosed
JP-H07104467-A POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD SHIN ETSU CHEM CO LTD 1995-04-21 JP disclosed
EP-0592139-A1 Composition for priming and cleaning based on organosilane CIBA-GEIGY AG (CH) 1994-04-13 EP disclosed
US-5080998-A PROCESS FOR THE FORMATION OF POSITIVE IMAGES UTILIZING ELECTRODEPOSITION OF O-QUINONE DIAZIDE COMPOUND CONTAINING PHOTORESIST ON CONDUCTIVE SURFACE CIBA-GEIGY CORPORATION (US) 1992-01-14 US disclosed
US-5002858-A Process for the formation of an image CIBA-GEIGY CORPORATION (US) 1991-03-26 US disclosed
US-4857437-A Process for the formation of an image CIBA-GEIGY CORPORATION (US) 1989-08-15 US disclosed
EP-0265387-A2 Method of forming images CIBA-GEIGY AG (CH) 1988-04-27 EP disclosed
JP-H00961998-A 0001-01-01 JP disclosed