SCHEMBL561352

SCHEMBL561352

CCC(CCO)C(O)CCO

nearest known ligand 0.54

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.54
THRB P10828 1/20 0.35
TSHR P16473 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8048860 0.92 LMNA (0.56) LMNATHRBTSHR
SCHEMBL3921436 0.90 LMNA (0.62) LMNATHRBTSHR
SCHEMBL19180080 0.89 LMNA (0.48) LMNATHRBTSHR
SCHEMBL19493226 0.86 LMNA (0.52) LMNATHRBTSHR
SCHEMBL7644910 0.86 LMNA (0.73) LMNATHRBTSHR
SCHEMBL28585659 0.85 LMNA (0.52) LMNATSHR
SCHEMBL4891542 0.84 LMNA (0.45) LMNATSHR
SCHEMBL4889457 0.84 LMNA (0.45) LMNATSHR
SCHEMBL8901993 0.82 LMNA (0.43) LMNATHRBTSHR
SCHEMBL4889324 0.80 LMNA (0.41) LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250231491-A1 PHOTOLITHOGRAPHIC METHOD USING SILICON PHOTORESIST SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) 2025-07-17 US disclosed
US-20250231492-A1 MANUFACTURE OF INTEGRATED CIRUIT USING POSITIVE TONE PHOTOPATTERNABLE DIELECTRIC INCLUDING HIGH SILICON CONTENT POLYSILSESQUIOXANE SUNTIFIC MATERIALS (WEIFANG)., LTD. (CN) 2025-07-17 US disclosed
US-11493845-B2 Organic bottom antireflective coating composition for nanolithography ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2022-11-08 US disclosed
US-20210380612-A1 PHOTORESIST COMPOSITIONS SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-12-09 US disclosed
US-11092894-B2 Method for forming pattern using anti-reflective coating composition comprising photoacid generator ROHM AND HAAS ELECTRONIC MATERIALS KOREA LTD. (KR) 2021-08-17 US disclosed
CN-105223774-B Method of forming pattern using anti-reflective coating composition including photoacid generator 罗门哈斯电子材料韩国有限公司 2019-12-20 CN disclosed
US-20160187781-A1 METHOD FOR FORMING PATTERN USING ANTI-REFLECTIVE COATING COMPOSITION COMPRISING PHOTOACID GENERATOR DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2016-06-30 US disclosed
US-20150185614-A1 ORGANIC BOTTOM ANTIREFLECTIVE COATING COMPOSITION FOR NANOLITHOGRAPHY DUPONT SPECIALTY MATERIALS KOREA LTD (KR) 2015-07-02 US disclosed
US-8927681-B2 Coating composition for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2015-01-06 US disclosed
US-20120034562-A1 COATING COMPOSITION FOR USE WITH AN OVERCOATED PHOTORESIST WAYTON GERALD B (US) 2012-02-09 US disclosed
US-20070020557-A1 New organic bottom antireflective polymer compositions AZ ELECTRONIC MATERIALS USA CORP. 2007-01-25 US disclosed
US-7163751-B2 spin-on antireflective coating compositions that contain an aromatic polyester resin and a solvent comprising an oxyisobutyric acid ester, especially methyl-2-hydroxyisobutyrate; SHIPLEY COMPANY, L.L.C. (US) 2007-01-16 US disclosed
US-20060057491-A1 Coating compositions for use with an overcoated photoresist ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C. (US) 2006-03-16 US disclosed
EP-1598702-A1 Coating compositions for use with an overcoated photoresist Rohm and Haas Electronic Materials, L.L.C. (US) 2005-11-23 EP disclosed
WO-2005097883-A2 METHOD OF PRODUCING A CROSSLINKED COATING IN THE MANUFACTURE OF INTEGRATED CIRCUITS KING INDUSTRIES, INC. (US) 2005-10-20 WO disclosed
US-20050215713-A1 Method of producing a crosslinked coating in the manufacture of integrated circuits KING INDUSTRIES, INC. 2005-09-29 US disclosed
US-6852421-B2 Microelectronic wafers having photosensitive antireflective polyester and photoresist multilayers used to form integrated circuits; relief images SHIPLEY COMPANY, L.L.C. (US) 2005-02-08 US disclosed
US-20040209200-A1 spin-on antireflective coating compositions that contain an aromatic polyester resin and a solvent comprising an oxyisobutyric acid ester, especially methyl-2-hydroxyisobutyrate; SHIPLEY COMPANY, L.L.C. 2004-10-21 US disclosed
US-20030180559-A1 Microelectronic wafers having photosensitive antireflective polyester and photoresist multilayers used to form integrated circuits; relief images SHIPLEY COMPANY, L.L.C. 2003-09-25 US disclosed
EP-1298492-A2 Coating compositions for use with an overcoated photoresist Shipley Co. L.L.C. (US) 2003-04-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210380612-A1 PHOTORESIST COMPOSITIONS NPM1, PORCN, PPOX LMNA 3401/4885THRB 4782/4885TSHR 4671/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.