SCHEMBL5627412

SCHEMBL5627412

C=C(C)C(=O)OC(C)CC(=O)O.[Cu]

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 5/20 0.44
ALDH1A1 P00352 3/20 0.38
ALOX15 P16050 1/20 0.36
SMN1; SMN2 Q16637 2/20 0.34
LMNA P02545 1/20 0.34
THRB P10828 1/20 0.33
CHRM2 P08172 1/20 0.31
CHRM4 P08173 1/20 0.31
CHRM1 P11229 1/20 0.31
TBXA2R P21731 1/20 0.31
SLC22A6 Q4U2R8 1/20 0.31
CACNA2D1 P54289 2/20 0.31
CACNB3 P54284 1/20 0.31
CACNA1C Q13936 1/20 0.31
PGR P06401 1/20 0.31
ADRA1A P35348 1/20 0.31
HTR2B P41595 1/20 0.31
CACNA2D2 Q9NY47 1/20 0.31
GALR3 O60755 1/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6365126 0.98 TSHR (0.45) TSHRALDH1A1ALOX15SMN1; SMN2LMNA
SCHEMBL2349785 0.83 TSHR (0.47) TSHRALDH1A1SMN1; SMN2THRBCHRM2
SCHEMBL18059980 0.82 TSHR (0.42) TSHRALDH1A1THRBCHRM2CHRM4
SCHEMBL18096461 0.81 ALOX15 (0.39) TSHRALDH1A1ALOX15SMN1; SMN2LMNA
SCHEMBL610576 0.80 TSHR (0.38) TSHRALDH1A1ALOX15SMN1; SMN2LMNA
Methacrylic Acid SCHEMBL9959196 0.80 ALOX15 (0.36) TSHRALDH1A1ALOX15SMN1; SMN2LMNA
SCHEMBL2540758 0.79 TSHR (0.50) TSHRALDH1A1SMN1; SMN2LMNATHRB
SCHEMBL2544205 0.79 TSHR (0.50) TSHRALDH1A1SMN1; SMN2LMNATHRB
SCHEMBL18747705 0.78 ALOX15 (0.32) TSHRALOX15SMN1; SMN2LMNASLC22A6
SCHEMBL8744854 0.78 TSHR (0.42) TSHRALDH1A1THRBCHRM2CHRM4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7238615-B2 Formation method for metal element, production method for semiconductor device, production method for electronic device, semiconductor device, electronic device, and electronic equipment SEIKO EPSON CORPORATION (JP) 2007-07-03 US disclosed
US-20040203235-A1 Formation method for metal element, production method for semiconductor device, production method for electronic device, semiconductor device, electronic device, and electronic equipment SEIKO EPSON CORPORATION (JP) 2004-10-14 US disclosed