SCHEMBL564541

SCHEMBL564541

CC(=CC12CC3CC(O)(CC(O)(C3)C1)C2)C(=O)O

nearest known ligand 0.33

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
DPP4 P27487 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1055411 1.00 DPP4 (0.31) DPP4
SCHEMBL701989 0.89 MEN1 (0.31)
SCHEMBL3786070 0.88 ALDH1A1 (0.31)
SCHEMBL906381 0.85 PKM (0.38) DPP4
SCHEMBL565526 0.85 PKM (0.38) DPP4
SCHEMBL2940327 0.83 ALDH1A1 (0.31)
SCHEMBL701269 0.82
SCHEMBL1693621 0.79 MEN1 (0.38)
SCHEMBL2477009 0.79 MEN1 (0.38)
SCHEMBL6368717 0.78 ALDH1A1 (0.35)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9465291-B2 Radiation-sensitive resin composition, polymer, compound, and method for producing compound JSR CORPORATION (JP) 2016-10-11 US disclosed
US-9268219-B2 Photoresist composition and resist pattern-forming method JSR CORPORATION (JP) 2016-02-23 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-20150301451-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-10-22 US disclosed
US-8980529-B2 Radiation-sensitive resin composition, polymer, and resist pattern-forming method JSR CORPORATION (JP) 2015-03-17 US disclosed
US-20140186771-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, COMPOUND, AND METHOD FOR PRODUCING COMPOUND JSR CORPORATION (JP) 2014-07-03 US disclosed
US-8735044-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-05-27 US disclosed
US-8614048-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2013-12-24 US disclosed
US-8535872-B2 Thermally cured underlayer for lithographic application FUJIFILM ELECTRONIC MATERIALS, U.S.A., INC. (US) 2013-09-17 US disclosed
US-20130203000-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-08-08 US disclosed
EP-1586594-B1 ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORP (JP) 2010-09-15 EP disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100167199-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-07-01 US disclosed
US-20100062373-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-03-11 US disclosed
US-20080206676-A1 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION FUJIFILM ELECTRONIC MATERIALS, U.S.A, INC 2008-08-28 US disclosed
WO-2008103776-A2 THERMALLY CURED UNDERLAYER FOR LITHOGRAPHIC APPLICATION FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) 2008-08-28 WO disclosed
EP-1586594-A1 ACRYLIC COPOLYMER AND RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2005-10-19 EP disclosed
CN-1210623-C Chemical amplifying type positive photoetching rubber composition SUMITOMO CHEMICAL CO (JP) 2005-07-13 CN disclosed
CN-1316675-A Chemical amplifying type positive photoetching rubber composition SUMITOMO CHEMICAL CO (JP) 2001-10-10 CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100221659-A1 COMPOUND, SALT, AND RADIATION-SENSITIVE RESIN COMPOSITION AFF1, RER1, AFF4 DPP4 4512/4885
US-20100062373-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS RER1, ASH2L, PHF2 DPP4 4696/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.