SCHEMBL5697635

SCHEMBL5697635

CC(C)(C)OC(=O)CC1C2CC3CC(C2)CC1C3

nearest known ligand 0.52

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 5/20 0.52
EPHX2 P34913 2/20 0.38
NR1H2 P55055 1/20 0.36
CYP2C9 P11712 1/20 0.35
ANO1 Q5XXA6 1/20 0.35
EPHX1 P07099 1/20 0.35
MEN1 O00255 1/20 0.34
MAPK1 P28482 1/20 0.34
KMT2A Q03164 1/20 0.34
P2RX7 Q99572 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2747443 0.79 HSD11B1 (0.57) HSD11B1EPHX2MEN1KMT2AP2RX7
SCHEMBL11122045 0.77 EPHX2 (0.44) HSD11B1EPHX2EPHX1
SCHEMBL22787488 0.76 HSD11B1 (0.53) HSD11B1EPHX2MAPK1KMT2A
SCHEMBL31372014 0.75 EPHX2 (0.40) HSD11B1EPHX2ANO1P2RX7
SCHEMBL17317565 0.75 CHRNB2 (0.45) EPHX2NR1H2CYP2C9MEN1KMT2A
SCHEMBL26871236 0.74 EPHX2 (0.35) EPHX2NR1H2MEN1MAPK1KMT2A
SCHEMBL12732747 0.74 MEN1 (0.45) EPHX2MEN1KMT2A
SCHEMBL19325376 0.73 HSD11B1 (0.42) HSD11B1EPHX2ANO1EPHX1
SCHEMBL23080555 0.73 EPHX2 (0.32) EPHX2
SCHEMBL702226 0.72 EPHX2 (0.40) HSD11B1EPHX2NR1H2MEN1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1441256-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-05-31 EP disclosed
EP-0789278-B1 Radiation-sensitive resin composition JSR CORP (JP) 2005-05-04 EP disclosed
US-20050019692-A1 Resist material and method for pattern formation KUBOTA HIROSHI (JP) 2005-01-27 US disclosed
EP-1441256-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2004-07-28 EP disclosed
US-6727032-B1 USEFUL IN MICRO-PROCESSING USING VARIOUS RADIATIONS, E.G., FAR-ULTRAVIOLET RADIATION SUCH AS KRF EXCIMER LASER OR ARF EXCIMER LASER, X RAYS SUCH AS SYNCHROTRON RADIATION, CHARGED PARTICLE RADIATION SUCH AS ELECTRON BEAM, ETC. JSR CORPORATION (JP) 2004-04-27 US disclosed
US-6692887-B1 COPOLYMER OF SUCH AS MALEIC ANHYDRIDE AND NORBORNENE ACID CLEAVABLE DERIVATIVE; TRANSPARENCY; DRY ETCHING RESISTANCE; PHOTORESIST PATTERN WITH HIGH ADHESION, SENSITIVITY, RESOLUTION AND DEVELOPABILITY JSR CORPORATION (JP) 2004-02-17 US disclosed
US-20010055727-A1 Resist material and method for pattern formation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-12-27 US disclosed
EP-0789278-A2 Radiation-sensitive resin composition JAPAN SYNTHETIC RUBBER CO., LTD. (JP) 1997-08-13 EP disclosed