SCHEMBL5833449

SCHEMBL5833449

C=CC(=O)OC(C)CC(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.39
ALDH1A1 P00352 1/20 0.31
TP53 P04637 1/20 0.31
CYP3A4 P08684 1/20 0.31
MAPK1 P28482 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
HIF1A Q16665 1/20 0.31
HPGD P15428 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12791912 0.85 TSHR (0.38) TSHRALDH1A1TP53CYP3A4MAPK1
SCHEMBL8373742 0.84 TSHR (0.42) TSHRALDH1A1TP53CYP3A4MAPK1
SCHEMBL21734448 0.82 TSHR (0.33) TSHRALDH1A1TP53CYP3A4MAPK1
SCHEMBL28406611 0.82 TSHR (0.44) TSHRALDH1A1TP53CYP3A4MAPK1
SCHEMBL20103329 0.81 TSHR (0.39) TSHR
SCHEMBL4655027 0.80 TSHR (0.42) TSHRALDH1A1TP53CYP3A4MAPK1
SCHEMBL16866890 0.80 TSHR (0.33) TSHRHPGD
SCHEMBL22336445 0.80 TSHR (0.37) TSHR
SCHEMBL13515112 0.80 TSHR (0.37) TSHRHPGD
SCHEMBL4396356 0.79 TSHR (0.36) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2022172889-A1 RESIN COMPOSITION, RESIN FILM, BASE MATERIAL, POLYMER, AND POLYMERIZABLE MONOMER セントラル硝子株式会社 2022-08-18 WO disclosed
US-20210341839-A1 FLUOROCARBOXYLIC ACID-CONTAINING MONOMER, FLUOROCARBOXYLIC ACID-CONTAINING POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-11-04 US disclosed
US-20210333712-A1 IODIZED AROMATIC CARBOXYLIC ACID TYPE PENDANT-CONTAINING POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-10-28 US disclosed
WO-2020162104-A1 COMPOSITION FOR SEALING ORGANIC LIGHT-EMITTING ELEMENT, AND ORGANIC LIGHT-EMITTING ELEMENT-SEALING FILM USING SAID COMPOSITION, AND FORMATION METHOD THEREFOR セントラル硝子株式会社 2020-08-13 WO disclosed
EP-1708027-B1 UPPER LAYER FILM FORMING COMPOSITION FOR LIQUID IMMERSION AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORP (JP) 2019-03-13 EP disclosed
EP-2950143-B1 RESIST COMPOSITION AND PATTERNING PROCESS SHINETSU CHEMICAL CO (JP) 2016-07-20 EP disclosed
US-20150346600-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-03 US disclosed
EP-2950143-A1 RESIST COMPOSITION AND PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2015-12-02 EP disclosed
US-9182674-B2 Immersion upper layer film forming composition and method of forming photoresist pattern JSR CORPORATION (JP) 2015-11-10 US disclosed
US-20120282553-A1 IMMERSION UPPER LAYER FILM FORMING COMPOSITION AND METHOD OF FORMING PHOTORESIST PATTERN JSR CORPORATION (JP) 2012-11-08 US disclosed
US-20080038676-A1 TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-02-14 US disclosed
US-20070269734-A1 Uper Layer Film Forming Composition for Liquid Immersion and Method of Forming Photoresist Pattern JSR CORPORATION (JP) 2007-11-22 US disclosed
US-20070264592-A1 Resist polymer, preparing method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070264592-A1 Resist polymer, preparing method, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US disclosed
US-20070231734-A1 Polymer, a photoacid generator and a dissolution modification agent; patterning; image resolution GLOBALFOUNDRIES U.S. INC. 2007-10-04 US disclosed
US-7235342-B2 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-06-26 US disclosed
US-7235342-B2 Negative photoresist composition including non-crosslinking chemistry INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2007-06-26 US disclosed
US-7067691-B2 reacting an alpha-substituted acrylic acid anhydride with a 1,1-bis(trifluoromethyl)-1,3-diol to produce a 1-optionally substituted 4,4-bis(trifluoromethyl)-3-hydroxy-2-butyl ester of an optionally 2-substituted acrylic acid CENTRAL GLASS CO., LTD. (JP) 2006-06-27 US disclosed
US-20050165249-A1 Process for producing alpha-substituted acrylic acid esters CENTRAL GLASS COMPANY, LTD. (JP) 2005-07-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210341839-A1 FLUOROCARBOXYLIC ACID-CONTAINING MONOMER, FLUOROCARBOXYLIC ACID-CONTAINING POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS NAF1, PFN1, COL1A1 TSHR 4479/4885ALDH1A1 640/4885TP53 1986/4885
US-20050165249-A1 Process for producing alpha-substituted acrylic acid esters AFF1, ASS1, RER1 TSHR 650/4885ALDH1A1 204/4885TP53 2983/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.