SCHEMBL5874325

SCHEMBL5874325

CCCCCCCC/C=C\CCCCCCCC(=O)ON1CCCCC1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TERT O14746 3/20 0.50
PTPN1 P18031 3/20 0.50
CYP1A2 P05177 2/20 0.50
MAPT P10636 2/20 0.50
CYP2C19 P33261 2/20 0.50
BLM P54132 2/20 0.50
HSD17B10 Q99714 2/20 0.50
FABP4 P15090 2/20 0.50
FAAH O00519 2/20 0.50
PPARG P37231 2/20 0.50
KMT2A Q03164 2/20 0.50
PPARD Q03181 2/20 0.50
PPARA Q07869 2/20 0.50
GMNN O75496 1/20 0.50
USP2 O75604 1/20 0.50
LMNA P02545 1/20 0.50
POLB P06746 1/20 0.50
CYP2C9 P11712 1/20 0.50
ALOX15 P16050 1/20 0.50
APEX1 P27695 1/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5875012 0.96 ALDH1A1 (0.54) HSD17B10FABP4PPARGPPARDPPARA
SCHEMBL28526154 0.92 TERT (0.54) TERTPTPN1CYP1A2MAPTCYP2C19
SCHEMBL5875143 0.92 MGLL (0.55) MAPTBLMHSD17B10FABP4FAAH
SCHEMBL8704444 0.91 L3MBTL1 (0.53) MAPTKMT2ALMNAMEN1
SCHEMBL8682250 0.91 L3MBTL1 (0.53) MAPTKMT2ALMNAMEN1
SCHEMBL8433164 0.91 L3MBTL1 (0.53) MAPTKMT2ALMNAMEN1
SCHEMBL8706673 0.91 L3MBTL1 (0.53) MAPTKMT2ALMNAMEN1
SCHEMBL8707838 0.91 L3MBTL1 (0.53) MAPTKMT2ALMNAMEN1
SCHEMBL5874212 0.91 L3MBTL1 (0.53) MAPTKMT2ALMNAMEN1
SCHEMBL5875291 0.91 L3MBTL1 (0.53) MAPTKMT2ALMNAMEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7128976-B2 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2006-10-31 US disclosed
US-20030091838-A1 Composition for film formation, method of film formation, and silica-based film JSR CORPORATION (JP) 2003-05-15 US disclosed