SCHEMBL602028

SCHEMBL602028

Brc1cccc(-c2c3ccccc3nc3ccccc23)c1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 5/20 0.56
ESR2 Q92731 4/20 0.56
BIRC5 O15392 1/20 0.51
ABCG2 Q9UNQ0 3/20 0.50
ABCB1 P08183 1/20 0.50
NPC1 O15118 2/20 0.47
TSHR P16473 2/20 0.47
RAB9A P51151 2/20 0.47
SMN1; SMN2 Q16637 2/20 0.47
TP53 P04637 1/20 0.47
ALDH1A1 P00352 2/20 0.46
MAPT P10636 2/20 0.46
MEN1 O00255 1/20 0.46
HPGD P15428 1/20 0.46
HTT P42858 1/20 0.46
KMT2A Q03164 1/20 0.46
POLB P06746 1/20 0.46
LMNA P02545 1/20 0.45
GABRA1 P14867 1/20 0.44
GABRG2 P18507 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29488289 1.00 ESR1 (0.56) ESR1ESR2BIRC5ABCG2ABCB1
SCHEMBL29660599 0.88 ESR1 (0.49) ESR1ESR2BIRC5ABCG2ABCB1
SCHEMBL459006 0.84 NPC1 (0.48) ESR1ESR2BIRC5ABCG2ABCB1
SCHEMBL30392309 0.84 NPC1 (0.48) ESR1ESR2BIRC5ABCG2ABCB1
SCHEMBL9972008 0.84 GABRA1 (0.47) BIRC5NPC1TSHRRAB9ASMN1; SMN2
SCHEMBL29058865 0.84 ESR1 (0.64) ESR1ESR2ALDH1A1MEN1KMT2A
SCHEMBL29274261 0.82 ESR1 (0.61) ESR1ESR2NPC1TSHRRAB9A
SCHEMBL18123645 0.81 ALOX5 (0.52) BIRC5ABCG2ABCB1NPC1TSHR
SCHEMBL29514776 0.80 ESR1 (0.73) ESR1ESR2TSHRRAB9ASMN1; SMN2
SCHEMBL194068 0.80 ESR1 (0.73) ESR1ESR2TSHRRAB9ASMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 80 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-110357989-B Tertiary amine photosensitizer, preparation method thereof, photosensitive resin composition containing tertiary amine photosensitizer and application of photosensitive resin composition 常州强力电子新材料股份有限公司 2022-04-22 CN claimed
CN-108241259-B Resist composition with good hole masking function and capable of directly depicting, exposing and imaging 杭州福斯特电子材料有限公司 2021-08-10 CN claimed
CN-110357989-A Tertiary amine photosensitizer, preparation method, comprising its photosensitive polymer combination and photosensitive polymer combination application 常州强力电子新材料股份有限公司 2019-10-22 CN claimed
CN-108241259-A A kind of anti-corrosion agent composition that can directly describe exposure image with good hole masking function 浙江福斯特新材料研究院有限公司 2018-07-03 CN claimed
US-5346805-A Initiator comprising an onium compound and an acridine derivative; printing plate, resist, photomask FUJI PHOTO FILM CO., LTD. (JP) 1994-09-13 US claimed
US-4587200-A Photopolymerizable composition comprising an acridine and a heterocyclic thiol compound as a photopolymerization initiator and a photographic process using said photopolymerizable composition FUJI PHOTO FILM CO., LTD. (JP) 1986-05-06 US claimed
US-12353130-B2 Photosensitive resin composition and photosensitive resin multilayer body ASAHI KASEI KABUSHIKI KAISHA (JP) 2025-07-08 US disclosed
US-20240408595-A1 STRUCTURE COMPRISING MICROCHANNEL, PRODUCTION METHOD FOR SAID STRUCTURE, AND MICROCHANNEL DEVICE ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-12-12 US disclosed
US-12032286-B2 Method for producing multi-layered type microchannel device using photosensitive resin laminate ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-07-09 US disclosed
CN-118119565-A Structure having micro-channel, method for manufacturing same, and micro-channel device 旭化成株式会社 2024-05-31 CN disclosed
CN-113156764-B Photosensitive resin composition and resist laminate 杭州福斯特电子材料有限公司 2024-04-26 CN disclosed
US-20240059803-A1 PHOTOSENSITIVE RESIN MULTILAYER BODY AND METHOD FOR PRODUCING SAME ASAHI KASEI KABUSHIKI KAISHA (JP) 2024-02-22 US disclosed
CN-111316164-B Photosensitive resin laminate and method for producing resist pattern 旭化成株式会社 2023-12-29 CN disclosed
CN-102144189-A Photosensitive resin composition, photosensitive resin laminate, method for forming resist pattern, conductive pattern, printed wiring board, lead frame, base, and method for manufacturing semiconductor package ASAHI KASEI E MATERIALS CORP 2011-08-03 CN disclosed
US-20100159691-A1 PHOTOSENSITIVE RESIN COMPOSITION AND LAMINATE ASAHI KASEI EMD CORPORATION (JP) 2010-06-24 US disclosed
CN-1945429-B Photosensitive resin composition and photosensitive resin laminate using the same ASAHI KASEI DENSHI K K 2010-06-09 CN disclosed
CN-101438208-A Photosensitive resin composition ASAHI KASEI EMD CORP (JP) 2009-05-20 CN disclosed
CN-1945429-A Photosensitive resin composition and photosensitive resin laminate using the same ASAHI KASEI DENSHI K K (JP) 2007-04-11 CN disclosed
US-5346805-A Initiator comprising an onium compound and an acridine derivative; printing plate, resist, photomask FUJI PHOTO FILM CO., LTD. (JP) 1994-09-13 US disclosed
US-4587200-A Photopolymerizable composition comprising an acridine and a heterocyclic thiol compound as a photopolymerization initiator and a photographic process using said photopolymerizable composition FUJI PHOTO FILM CO., LTD. (JP) 1986-05-06 US disclosed