SCHEMBL60358

SCHEMBL60358

Cc1c(O)ccc(C(C)C(=O)O)c1C

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGS2 P35354 10/20 0.49
PTGS1 P23219 8/20 0.49
GRM1 Q13255 2/20 0.40
LMNA P02545 3/20 0.36
TRPA1 O75762 1/20 0.36
CHRM1 P11229 1/20 0.36
SLC6A2 P23975 1/20 0.36
ADRA1A P35348 1/20 0.36
HTR2B P41595 1/20 0.36
CYP2C9 P11712 2/20 0.36
AKR1C3 P42330 2/20 0.36
CXCR1 P25024 2/20 0.36
CXCR2 P25025 2/20 0.36
CXCL8 P10145 2/20 0.36
ALB P02768 1/20 0.36
ESR1 P03372 1/20 0.36
ALOX5 P09917 1/20 0.36
RARB P10826 1/20 0.36
ADRB3 P13945 1/20 0.36
NFKB1 P19838 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL7102472 0.82 PTGS2 (0.47) PTGS2PTGS1LMNATRPA1SLC6A2
SCHEMBL25311714 0.80 PTGS2 (0.43) PTGS2PTGS1GRM1LMNACYP2C9
SCHEMBL490949 0.79 PTGS2 (0.49) PTGS2PTGS1GRM1LMNACYP2C9
SCHEMBL27456972 0.78 TYR (0.40) PTGS2PTGS1RARBGAAALDH1A1
SCHEMBL5394172 0.78 LMNA (0.52) PTGS1LMNATRPA1CHRM1SLC6A2
SCHEMBL29849603 0.78 LMNA (0.52) PTGS1LMNATRPA1CHRM1SLC6A2
SCHEMBL28616370 0.77 ALDH1A1 (0.36) GRM1LMNATRPA1CHRM1SLC6A2
SCHEMBL3833747 0.76 PTGS2 (0.42) PTGS2PTGS1GRM1LMNAGAA
SCHEMBL28238190 0.76 TRPA1 (0.62) PTGS2PTGS1LMNATRPA1CHRM1
SCHEMBL6741099 0.75 TRPA1 (0.39) LMNATRPA1CHRM1SLC6A2ADRA1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8906598-B2 Pattern forming method, method for manufacturing semiconductor device, and material for forming coating layer of resist pattern FUJITSU LIMITED (JP) 2014-12-09 US disclosed
US-8476346-B2 Resist pattern thickening material, semiconductor device, and production method thereof FUJITSU LIMITED (JP) 2013-07-02 US disclosed
US-20120126372-A1 RESIST PATTERN THICKENING MATERIAL AND PROCESS FOR FORMING RESIST PATTERN, AND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2012-05-24 US disclosed
US-8129092-B2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2012-03-06 US disclosed
US-20110250541-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND MATERIAL FOR FORMING COATING LAYER OF RESIST PATTERN FUJITSU LIMITED (JP) 2011-10-13 US disclosed
US-20110101508-A1 RESIST PATTERN THICKENING MATERIAL, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREOF FUJITSU LIMITED (JP) 2011-05-05 US disclosed
US-7923573-B2 Benzene compound having 2 or more substituents DAIICHI SANKYO COMPANY, LIMITED (JP) 2011-04-12 US disclosed
CN-1975571-B Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD 2011-04-06 CN disclosed
EP-1793274-A2 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-06-06 EP disclosed
CN-1975571-A Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LTD (JP) 2007-06-06 CN disclosed
US-20070123623-A1 Resist pattern thickening material and process for forming resist pattern, and semiconductor device and method for manufacturing the same FUJITSU LIMITED (JP) 2007-05-31 US disclosed