SCHEMBL6037079

SCHEMBL6037079

C=CC(=O)OC[Si](C)(O[Si](OC)(OC)OC)O[Si](OC)(OC)OC

nearest known ligand 0.40

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
TSHR P16473 7/20 0.40
ALDH1A1 P00352 4/20 0.39
TP53 P04637 3/20 0.39
HIF1A Q16665 3/20 0.39
CYP3A4 P08684 2/20 0.39
MAPK1 P28482 1/20 0.39
SMN1; SMN2 Q16637 1/20 0.39
HPGD P15428 1/20 0.39
HSD17B10 Q99714 1/20 0.38
THRB P10828 2/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1010877 0.86 TSHR (0.40) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL108692 0.85 TSHR (0.45) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL397010 0.83 TSHR (0.47) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL27853675 0.77 TSHR (0.42) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL18848195 0.77 TSHR (0.42) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL107384 0.77 TSHR (0.45) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL13197625 0.75 TSHR (0.40) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL332972 0.75 TSHR (0.47) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL106615 0.75 TSHR (0.47) TSHRALDH1A1TP53HIF1ACYP3A4
SCHEMBL600138 0.74 TSHR (0.50) TSHRALDH1A1TP53HIF1ACYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7547504-B2 Pattern reversal employing thick residual layers MOLECULAR IMPRINTS, INC. (US) 2009-06-16 US disclosed
US-7252777-B2 Method of forming an in-situ recessed structure MOLECULAR IMPRINTS, INC. (US) 2007-08-07 US disclosed
US-7241395-B2 Reverse tone patterning on surfaces having planarity perturbations MOLECULAR IMPRINTS, INC. (US) 2007-07-10 US disclosed
US-7205244-B2 Patterning substrates employing multi-film layers defining etch-differential interfaces MOLECULAR IMPRINTS (US) 2007-04-17 US disclosed
US-20060063387-A1 Method of Patterning Surfaces While Providing Greater Control of Recess Anisotropy MOLECULAR IMPRINTS, INC. (US) 2006-03-23 US disclosed