SCHEMBL6138475

SCHEMBL6138475

Nc1cccc(-c2[c]cccc2N)c1

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAOA P21397 1/20 0.47
CYP3A4 P08684 1/20 0.41
CASP1 P29466 1/20 0.41
RECQL P46063 1/20 0.41
MAP4K4 O95819 6/20 0.40
MEN1 O00255 2/20 0.39
PSIP1 O75475 1/20 0.39
AXL P30530 1/20 0.39
MKNK1 Q9BUB5 1/20 0.39
MKNK2 Q9HBH9 1/20 0.39
ALDH1A1 P00352 4/20 0.37
KDM4E B2RXH2 2/20 0.37
MAPT P10636 2/20 0.37
CA12 O43570 2/20 0.37
CA1 P00915 2/20 0.37
CA2 P00918 2/20 0.37
CA9 Q16790 2/20 0.37
MECP2 P51608 1/20 0.37
LMNA P02545 1/20 0.37
HPGD P15428 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6607475 0.79 CYP3A4 (0.46) MAOACYP3A4CASP1MEN1ALDH1A1
SCHEMBL7391949 0.76 MCL1 (0.53) MAOACYP3A4CASP1RECQLMAP4K4
SCHEMBL8138795 0.75 ALDH1A1 (0.45) MAOACYP3A4RECQLMEN1ALDH1A1
SCHEMBL2585790 0.73 MAP4K4 (0.49) MAOACYP3A4CASP1RECQLMAP4K4
SCHEMBL7531095 0.72 DHODH (0.37) MEN1ALDH1A1KDM4EMAPTLMNA
SCHEMBL30500254 0.71 MAOA (0.83) MAOACYP3A4CASP1RECQLMAP4K4
SCHEMBL251095 0.71 MAOA (0.83) MAOACYP3A4CASP1RECQLMAP4K4
SCHEMBL29403794 0.71 MAOA (0.83) MAOACYP3A4CASP1RECQLMAP4K4
SCHEMBL3298109 0.71 MAOA (0.54) MAOACYP3A4CASP1RECQLMAP4K4
SCHEMBL6131965 0.71 CYP3A4 (0.35) CYP3A4CASP1MAP4K4MEN1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1117102-B1 Method of manufacturing material for forming insulating film JSR CORP (JP) 2005-08-10 EP disclosed
US-6642352-B2 Providing a silicon inorganic polymer compound or polyarylenes or polyphenylene ether organic polymer compound, treating the polymeric compound with a zeta-potential producing filter material, and producing curable polymer compound JSR CORPORATION (JP) 2003-11-04 US disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed