SCHEMBL6139926

SCHEMBL6139926

CC(C)(C)c1ccc(S(=O)(=O)[O-])cc1.CN(C)c1ccc([S+](c2ccc(OC(C)(C)C)cc2)c2ccc(N(C)C)cc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.37
LMNA P02545 1/20 0.37
HTT P42858 1/20 0.37
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CA9 Q16790 1/20 0.36
ALDH1A1 P00352 6/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
MAPT P10636 1/20 0.36
RECQL P46063 1/20 0.36
TP53 P04637 1/20 0.35
HSD17B10 Q99714 2/20 0.35
TSHR P16473 1/20 0.35
NR3C1 P04150 1/20 0.34
RAB9A P51151 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
KDM4E B2RXH2 1/20 0.33
HPGD P15428 1/20 0.33
ALOX15 P16050 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140588 1.00 SMN1; SMN2 (0.37) SMN1; SMN2LMNAHTTCA1CA2
SCHEMBL6140382 0.89 ALDH1A1 (0.43) SMN1; SMN2LMNACA1CA2CA9
SCHEMBL6140681 0.89 ALDH1A1 (0.42) SMN1; SMN2LMNAHTTALDH1A1MEN1
SCHEMBL6140116 0.89 ALDH1A1 (0.42) SMN1; SMN2LMNAHTTALDH1A1MEN1
SCHEMBL6140643 0.89 ALDH1A1 (0.37) SMN1; SMN2LMNACA1CA2CA9
SCHEMBL6140718 0.89 HTT (0.36) SMN1; SMN2LMNAHTTCA1CA2
SCHEMBL8318829 0.87 ALDH1A1 (0.36) SMN1; SMN2LMNACA1CA2CA9
SCHEMBL8324853 0.87 ALDH1A1 (0.36) SMN1; SMN2LMNACA1CA2CA9
SCHEMBL6140127 0.85 CA2 (0.37) SMN1; SMN2LMNACA1CA2CA9
SCHEMBL6140762 0.85 CA2 (0.37) SMN1; SMN2LMNACA1CA2CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed