SCHEMBL6140127

SCHEMBL6140127

CCc1ccc(S(=O)(=O)[O-])cc1.CN(C)c1ccc([S+](c2ccc(OC(C)(C)C)cc2)c2ccc(N(C)C)cc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA2 P00918 4/20 0.37
CA1 P00915 3/20 0.37
CA9 Q16790 3/20 0.37
CA7 P43166 1/20 0.37
CNR2 P34972 2/20 0.36
MEN1 O00255 1/20 0.35
KMT2A Q03164 1/20 0.35
KDM4E B2RXH2 3/20 0.34
LMNA P02545 1/20 0.34
HSP90AA1 P07900 1/20 0.34
MAPT P10636 1/20 0.34
RECQL P46063 1/20 0.34
HDAC3 O15379 1/20 0.33
HDAC4 P56524 1/20 0.33
HDAC1 Q13547 1/20 0.33
HDAC7 Q8WUI4 1/20 0.33
HDAC2 Q92769 1/20 0.33
HDAC10 Q969S8 1/20 0.33
HDAC11 Q96DB2 1/20 0.33
HDAC8 Q9BY41 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140762 1.00 CA2 (0.37) CA2CA1CA9CA7CNR2
SCHEMBL6140880 0.87 CA2 (0.46) CA2CA1CA9CA7CNR2
SCHEMBL6140116 0.86 ALDH1A1 (0.42) CNR2MEN1KMT2AKDM4ELMNA
SCHEMBL6140643 0.86 ALDH1A1 (0.37) CA2CA1CA9CNR2MEN1
SCHEMBL6140681 0.86 ALDH1A1 (0.42) CNR2MEN1KMT2AKDM4ELMNA
SCHEMBL6139926 0.85 SMN1; SMN2 (0.37) CA2CA1CA9MEN1KMT2A
SCHEMBL6140588 0.85 SMN1; SMN2 (0.37) CA2CA1CA9MEN1KMT2A
SCHEMBL8318829 0.85 ALDH1A1 (0.36) CA2CA1CA9CA7MEN1
SCHEMBL8324853 0.85 ALDH1A1 (0.36) CA2CA1CA9CA7MEN1
Trifluoromethanesulfonic Acid SCHEMBL8069550 0.81 HSP90AA1 (0.34) CA2CA1CA9CA7CNR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed