SCHEMBL6140338

SCHEMBL6140338

CCOC(C)Oc1ccc([S+](c2ccc(OC(C)OCC)cc2)c2cccc(OCc3ccncc3)c2)cc1.Cc1ccc(S(=O)(=O)[O-])cc1

nearest known ligand 0.41

Known targets — ChEMBL curated mechanism

CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
RORC P51449 1/20 0.41
NOS3 P29474 1/20 0.39
NOS1 P29475 1/20 0.39
NOS2 P35228 1/20 0.39
F2 P00734 2/20 0.37
TLR4 O00206 1/20 0.37
TLR2 O60603 1/20 0.37
MAOB P27338 5/20 0.36
MAOA P21397 2/20 0.36
CYP27B1 O15528 1/20 0.36
CYP24A1 Q07973 1/20 0.36
ADAMTS4 O75173 1/20 0.35
MMP13 P45452 1/20 0.35
AR P10275 1/20 0.34
LMNA P02545 1/20 0.34
HTT P42858 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
GRM2 Q14416 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140075 1.00 RORC (0.41) RORCNOS3NOS1NOS2F2
SCHEMBL6140544 0.92 RORC (0.45) RORCMAOBCYP27B1CYP24A1ADAMTS4
SCHEMBL6140274 0.92 RORC (0.45) RORCMAOBCYP27B1CYP24A1ADAMTS4
SCHEMBL6140203 0.87 TLR4 (0.38) TLR4TLR2MAOAADAMTS4LMNA
SCHEMBL6140457 0.87 TLR4 (0.38) TLR4TLR2MAOAADAMTS4LMNA
SCHEMBL6140191 0.86 NOS3 (0.49) RORCNOS3NOS1NOS2F2
SCHEMBL6140433 0.83 NOS3 (0.41) RORCNOS3NOS1NOS2F2
SCHEMBL6140802 0.83 NOS3 (0.41) RORCNOS3NOS1NOS2F2
SCHEMBL6140388 0.81 LMNA (0.37) LMNAHTTSMN1; SMN2
SCHEMBL6140592 0.81 LMNA (0.37) LMNAHTTSMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed