Known targets — ChEMBL curated mechanism
CHRM1CHRM2CHRM3CHRM4CHRM5SLC6A2dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 17)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NOS3 | P29474 | 1/20 | 0.49 |
| ▸ | NOS1 | P29475 | 1/20 | 0.49 |
| ▸ | NOS2 | P35228 | 1/20 | 0.49 |
| ▸ | MAOB | P27338 | 5/20 | 0.46 |
| ▸ | F2 | P00734 | 2/20 | 0.46 |
| ▸ | MAOA | P21397 | 2/20 | 0.44 |
| ▸ | TLR4 | O00206 | 1/20 | 0.44 |
| ▸ | TLR2 | O60603 | 1/20 | 0.44 |
| ▸ | RORC | P51449 | 1/20 | 0.44 |
| ▸ | CYP27B1 | O15528 | 1/20 | 0.43 |
| ▸ | CYP24A1 | Q07973 | 1/20 | 0.43 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.41 |
| ▸ | LMNA | P02545 | 1/20 | 0.40 |
| ▸ | HTT | P42858 | 1/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.40 |
| ▸ | AR | P10275 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6140710 | 0.91 | TLR4 (0.46) | NOS3NOS1NOS2MAOBF2 | |
| SCHEMBL6140433 | 0.90 | NOS3 (0.41) | NOS3NOS1NOS2MAOBF2 | |
| SCHEMBL6140802 | 0.90 | NOS3 (0.41) | NOS3NOS1NOS2MAOBF2 | |
| SCHEMBL6139950 | 0.90 | NOS3 (0.43) | NOS3NOS1NOS2MAOBF2 | |
| SCHEMBL6140453 | 0.88 | NOS3 (0.45) | NOS3NOS1NOS2MAOBF2 | |
| SCHEMBL6140338 | 0.86 | RORC (0.41) | NOS3NOS1NOS2MAOBF2 | |
| SCHEMBL6140075 | 0.86 | RORC (0.41) | NOS3NOS1NOS2MAOBF2 | |
| SCHEMBL6140104 | 0.85 | RORC (0.49) | MAOBRORCCYP27B1CYP24A1NPC1 | |
| SCHEMBL6140463 | 0.85 | F2 (0.41) | NOS3NOS1NOS2MAOBF2 | |
| SCHEMBL6140576 | 0.85 | F2 (0.41) | NOS3NOS1NOS2MAOBF2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6955939-B1 | Memory element formation with photosensitive polymer dielectric | ADVANCED MICRO DEVICES, INC. (US) | 2005-10-18 | — | — | US | disclosed |
| US-6878961-B2 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. (US) | 2005-04-12 | — | — | US | disclosed |
| US-20050045877-A1 | PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS | MORGAN STANLEY SENIOR FUNDING, INC. | 2005-03-03 | — | — | US | disclosed |
| US-6825060-B1 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. | 2004-11-30 | — | — | US | disclosed |
| US-6534243-B1 | A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature | ADVANCED MICRO DEVICES, INC. | 2003-03-18 | — | — | US | disclosed |
| US-6492075-B1 | COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST | ADVANCED MICRO DEVICES, INC. | 2002-12-10 | — | — | US | disclosed |
| US-6274289-B1 | Chemical resist thickness reduction process | ADVANCED MICRO DEVICES, INC. | 2001-08-14 | — | — | US | disclosed |
| US-5847218-A | Sulfonium salts and chemically amplified positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-08 | — | — | US | disclosed |