Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TLR4 | O00206 | 1/20 | 0.39 |
| ▸ | TLR2 | O60603 | 1/20 | 0.39 |
| ▸ | ADAMTS4 | O75173 | 1/20 | 0.39 |
| ▸ | HDAC3 | O15379 | 1/20 | 0.37 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.37 |
| ▸ | HDAC1 | Q13547 | 1/20 | 0.37 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.37 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.37 |
| ▸ | HDAC10 | Q969S8 | 1/20 | 0.37 |
| ▸ | HDAC11 | Q96DB2 | 1/20 | 0.37 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.37 |
| ▸ | HDAC6 | Q9UBN7 | 1/20 | 0.37 |
| ▸ | HDAC9 | Q9UKV0 | 1/20 | 0.37 |
| ▸ | HDAC5 | Q9UQL6 | 1/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.37 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.37 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.37 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6140741 | 0.94 | SMN1; SMN2 (0.39) | TLR4TLR2ADAMTS4HDAC3HDAC4 | |
| SCHEMBL6140822 | 0.94 | SMN1; SMN2 (0.39) | TLR4TLR2ADAMTS4HDAC3HDAC4 | |
| SCHEMBL6140567 | 0.92 | ADAMTS4 (0.45) | ADAMTS4HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL6140498 | 0.92 | ADAMTS4 (0.45) | ADAMTS4HDAC3HDAC4HDAC1HDAC7 | |
| SCHEMBL6140456 | 0.89 | TLR4 (0.47) | TLR4TLR2ADAMTS4HDAC3HDAC4 | |
| SCHEMBL6140465 | 0.89 | ALDH1A1 (0.45) | TLR4TLR2ADAMTS4HDAC3HDAC4 | |
| SCHEMBL6140321 | 0.87 | SYK (0.36) | TLR4TLR2HDAC3HDAC4HDAC1 | |
| SCHEMBL6140200 | 0.87 | POLB (0.42) | TLR4TLR2ADAMTS4HDAC3HDAC4 | |
| SCHEMBL6140063 | 0.86 | NOS3 (0.38) | TLR4TLR2ADAMTS4LMNAGPR132 | |
| SCHEMBL6140055 | 0.86 | SMN1; SMN2 (0.45) | ADAMTS4HDAC3HDAC4HDAC1HDAC7 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6955939-B1 | Memory element formation with photosensitive polymer dielectric | ADVANCED MICRO DEVICES, INC. (US) | 2005-10-18 | — | — | US | disclosed |
| US-6878961-B2 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. (US) | 2005-04-12 | — | — | US | disclosed |
| US-20050045877-A1 | PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS | MORGAN STANLEY SENIOR FUNDING, INC. | 2005-03-03 | — | — | US | disclosed |
| US-6825060-B1 | Photosensitive polymeric memory elements | ADVANCED MICRO DEVICES, INC. | 2004-11-30 | — | — | US | disclosed |
| US-6534243-B1 | A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature | ADVANCED MICRO DEVICES, INC. | 2003-03-18 | — | — | US | disclosed |
| US-6492075-B1 | COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST | ADVANCED MICRO DEVICES, INC. | 2002-12-10 | — | — | US | disclosed |
| US-6274289-B1 | Chemical resist thickness reduction process | ADVANCED MICRO DEVICES, INC. | 2001-08-14 | — | — | US | disclosed |
| US-5847218-A | Sulfonium salts and chemically amplified positive resist compositions | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1998-12-08 | — | — | US | disclosed |