SCHEMBL6140143

SCHEMBL6140143

CC(C)(C)OC(=O)COc1ccc([S+](c2cccc(OCc3ccncc3)c2)c2cccc(OCc3ccncc3)c2)cc1.Cc1ccc(S(=O)(=O)[O-])c(C)c1

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
RORC P51449 1/20 0.40
F2 P00734 2/20 0.36
NOS3 P29474 1/20 0.35
NOS1 P29475 1/20 0.35
NOS2 P35228 1/20 0.35
RAPGEF3 O95398 1/20 0.35
TSHR P16473 1/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
LMNA P02545 2/20 0.35
ALDH1A1 P00352 2/20 0.35
MAOB P27338 1/20 0.35
GPR119 Q8TDV5 1/20 0.35
PTPN1 P18031 1/20 0.34
MAPT P10636 2/20 0.34
HSP90AA1 P07900 1/20 0.34
HPGD P15428 1/20 0.34
KDM4E B2RXH2 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
MAPK14 Q16539 1/20 0.33
NPC1 O15118 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140432 1.00 RORC (0.40) RORCF2NOS3NOS1NOS2
SCHEMBL6140111 0.94 RORC (0.43) RORCRAPGEF3TSHRSMN1; SMN2LMNA
SCHEMBL6140576 0.92 F2 (0.41) RORCF2NOS3NOS1NOS2
SCHEMBL6140463 0.92 F2 (0.41) RORCF2NOS3NOS1NOS2
SCHEMBL6140422 0.88 KMT2A (0.39) RAPGEF3SMN1; SMN2ALDH1A1PTPN1MAPT
SCHEMBL6140165 0.88 PTPN1 (0.40) F2TSHRSMN1; SMN2LMNAALDH1A1
SCHEMBL6140945 0.88 RORC (0.41) RORCF2NOS3NOS1NOS2
SCHEMBL6140251 0.88 RORC (0.41) RORCF2NOS3NOS1NOS2
SCHEMBL6140500 0.88 RORC (0.41) RORCTSHRSMN1; SMN2LMNAALDH1A1
SCHEMBL6140453 0.87 NOS3 (0.45) RORCF2NOS3NOS1NOS2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed