SCHEMBL6140945

SCHEMBL6140945

CC(C)(C)Oc1ccc([S+](c2cccc(OCc3ccncc3)c2)c2cccc(OCc3ccncc3)c2)cc1.Cc1ccc(S(=O)(=O)[O-])c(C)c1

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
RORC P51449 1/20 0.41
NOS3 P29474 1/20 0.39
NOS1 P29475 1/20 0.39
NOS2 P35228 1/20 0.39
TLR4 O00206 1/20 0.35
TLR2 O60603 1/20 0.35
CYP27B1 O15528 1/20 0.35
CYP24A1 Q07973 1/20 0.35
MAOB P27338 3/20 0.34
F2 P00734 3/20 0.34
SLC2A1 P11166 2/20 0.33
HSP90AA1 P07900 1/20 0.33
MAPT P10636 1/20 0.33
HPGD P15428 1/20 0.33
MAOA P21397 2/20 0.33
KMT2A Q03164 1/20 0.33
CYP26A1 O43174 1/20 0.33
CYP3A4 P08684 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6140251 1.00 RORC (0.41) RORCNOS3NOS1NOS2TLR4
SCHEMBL6140028 0.93 RORC (0.47) RORCCYP27B1CYP24A1HSP90AA1MAPT
SCHEMBL6140640 0.93 RORC (0.47) RORCCYP27B1CYP24A1HSP90AA1MAPT
SCHEMBL6140453 0.92 NOS3 (0.45) RORCNOS3NOS1NOS2TLR4
SCHEMBL6140802 0.91 NOS3 (0.41) RORCNOS3NOS1NOS2TLR4
SCHEMBL6140433 0.91 NOS3 (0.41) RORCNOS3NOS1NOS2TLR4
SCHEMBL6140432 0.88 RORC (0.40) RORCNOS3NOS1NOS2MAOB
SCHEMBL6140143 0.88 RORC (0.40) RORCNOS3NOS1NOS2MAOB
SCHEMBL6140321 0.87 SYK (0.36) TLR4TLR2MAOAKMT2A
SCHEMBL6140016 0.87 RORC (0.52) RORCCYP27B1CYP24A1MAOBHSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6955939-B1 Memory element formation with photosensitive polymer dielectric ADVANCED MICRO DEVICES, INC. (US) 2005-10-18 US disclosed
US-6878961-B2 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. (US) 2005-04-12 US disclosed
US-20050045877-A1 PHOTOSENSITIVE POLYMERIC MEMORY ELEMENTS MORGAN STANLEY SENIOR FUNDING, INC. 2005-03-03 US disclosed
US-6825060-B1 Photosensitive polymeric memory elements ADVANCED MICRO DEVICES, INC. 2004-11-30 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed
US-5847218-A Sulfonium salts and chemically amplified positive resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-08 US disclosed