Styrene

Styrene

SCHEMBL6319042

C=Cc1ccccc1.C=Cc1ccccc1O.C=Cc1ccccc1OC

nearest known ligand 0.51

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Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NFE2L2 Q16236 4/20 0.51
TRPA1 O75762 3/20 0.51
MAPT P10636 3/20 0.50
KDM4E B2RXH2 3/20 0.50
NPC1 O15118 3/20 0.50
RAB9A P51151 3/20 0.50
MAPK1 P28482 2/20 0.50
ATM Q13315 1/20 0.50
NPSR1 Q6W5P4 1/20 0.50
TDP1 Q9NUW8 1/20 0.50
TSHR P16473 2/20 0.47
TP53 P04637 2/20 0.47
CA1 P00915 1/20 0.47
CA2 P00918 1/20 0.47
AR P10275 1/20 0.44
MAOB P27338 1/20 0.44
ALDH1A1 P00352 3/20 0.44
CYP3A4 P08684 2/20 0.43
MEN1 O00255 2/20 0.43
KMT2A Q03164 2/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Styrene SCHEMBL29242057 0.90 NFE2L2 (0.61) NFE2L2TRPA1MAPTKDM4ENPC1
Guaiacol SCHEMBL27555536 0.85 TP53 (0.67) NFE2L2TRPA1MAPTKDM4ENPC1
Styrene SCHEMBL2928107 0.85 ALDH1A1 (0.61) NFE2L2TRPA1MAPTKDM4ETSHR
Benzene SCHEMBL28154477 0.83 NFE2L2 (0.59) NFE2L2TRPA1MAPTKDM4ENPC1
SCHEMBL14909 0.81 NFE2L2 (0.55) NFE2L2TRPA1MAPTKDM4ENPC1
SCHEMBL29377009 0.81 NFE2L2 (0.55) NFE2L2TRPA1MAPTKDM4ENPC1
SCHEMBL15048521 0.81 RELA (0.54) NFE2L2TRPA1MAPTKDM4ENPC1
SCHEMBL27542758 0.79 NFE2L2 (0.53) NFE2L2TRPA1MAPTKDM4ENPC1
Hydrogen Sulfide SCHEMBL27500079 0.79 NFE2L2 (0.53) NFE2L2TRPA1MAPTKDM4ENPC1
1,2-Dimethoxybenzene SCHEMBL27615214 0.79 ALDH1A1 (0.64) NFE2L2TRPA1NPC1RAB9AMAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6861198-B2 Negative resist material and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-01 US disclosed
US-20040023151-A1 Negative resist material and pattern formation method using the same SHIN-ETSU CHEMICAL CO., LTD. 2004-02-05 US disclosed