SCHEMBL6332192

SCHEMBL6332192

CCOC(=O)C(CN1CCCC1)OCCOC

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.37
TDP1 Q9NUW8 1/20 0.37
L3MBTL1 Q9Y468 2/20 0.36
HRH3 Q9Y5N1 3/20 0.33
CACNA1F O60840 2/20 0.33
BCHE P06276 2/20 0.33
CACNA1D Q01668 2/20 0.33
CACNA1S Q13698 2/20 0.33
CACNA1C Q13936 2/20 0.33
SLC6A4 P31645 1/20 0.33
PTPN1 P18031 1/20 0.33
KDM4E B2RXH2 1/20 0.33
POLB P06746 2/20 0.33
CHRM2 P08172 1/20 0.33
ADRA2B P18089 1/20 0.33
DRD3 P35462 1/20 0.33
SIGMAR1 Q99720 1/20 0.33
MAPT P10636 1/20 0.33
HPGD P15428 1/20 0.33
ANPEP P15144 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8436602 0.75 ALDH1A1 (0.37) ALDH1A1TDP1
SCHEMBL29064892 0.74 CPB2 (0.37) ALDH1A1TDP1
SCHEMBL2959602 0.72 KMT2A (0.43) ALDH1A1L3MBTL1HRH3SLC6A4KDM4E
SCHEMBL25322115 0.72 CHRM2 (0.49) ALDH1A1L3MBTL1HRH3SLC6A4POLB
SCHEMBL6543659 0.70 CHRM2 (0.51) ALDH1A1L3MBTL1HRH3POLBCHRM2
SCHEMBL22354443 0.70 ALDH1A1 (0.36) ALDH1A1L3MBTL1HRH3KDM4EPOLB
SCHEMBL500529 0.70 ALDH1A1 (0.37) ALDH1A1TDP1KDM4EPOLB
SCHEMBL28738774 0.70 ALDH1A1 (0.38) ALDH1A1TDP1
SCHEMBL2961656 0.69 ALDH1A1 (0.50) ALDH1A1L3MBTL1KDM4EPOLBMAPT
SCHEMBL28468299 0.69 ZDHHC7 (0.44) L3MBTL1MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101477307-B Photomask blank, resist pattern forming process, and photomask preparation process SHIN ETSU EHEMICAL CO LTD 2012-12-12 CN disclosed
CN-102591152-A Resist composition and patterning process SHIN ETSU EHEMICAL CO LTD 2012-07-18 CN disclosed
CN-102520581-A Method for forming photoresist pattern SHINETSU CHEMICAL CO 2012-06-27 CN disclosed
CN-101625524-A Photoresist composition and pattern forming method SHINETSU CHEMICAL CO 2010-01-13 CN disclosed
CN-101477307-A Photomask blank, resist pattern forming process, and photomask preparation process SHINETSU CHEMICAL CO (JP) 2009-07-08 CN disclosed
US-20050079446-A1 Novel polymerizable compound, polymer, positive-resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed
US-20050079440-A1 Novel polymer, positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-04-14 US disclosed