SCHEMBL6363602

SCHEMBL6363602

[CH2]C(=O)C(C)(C)CC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6364655 0.77
SCHEMBL8434912 0.75
SCHEMBL429953 0.73 FFAR3 (0.41)
SCHEMBL553596 0.73 TDP1 (0.38)
SCHEMBL5723675 0.73 CES2 (0.39)
Dimebutic Acid SCHEMBL47533 0.71
SCHEMBL269270 0.71
SCHEMBL4823585 0.71
SCHEMBL6364240 0.71 CYP4F2 (0.32)
SCHEMBL276549 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6849384-B2 Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions NEC CORPORATION (JP) 2005-02-01 US disclosed
US-6638685-B2 Resolution, sensitivity and smoothness on side surfaces of a transferred pattern; photolithography NEC CORPORATION (JP) 2003-10-28 US disclosed
US-20030198889-A1 Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions NEC CORPORATION (JP) 2003-10-23 US disclosed
US-6602647-B2 Photo acid generator with high transparency and excellent heat stability in a photoresist for lithography using far ultraviolet light, especially light of ArF excimer consists of a cyclic sulfonium compound with 2-oxo group NEC CORPORATION (JP) 2003-08-05 US disclosed
US-20020182535-A1 Photoacid generator containing two kinds of sulfonium salt compound, chemically amplified resist containing the same and pattern transfer method NEC CORPORATION (JP) 2002-12-05 US disclosed
US-20020045122-A1 Sulfonium salt compound and resist composition and pattern forming method using the same NEC CORPORATION 2002-04-18 US disclosed
EP-1113334-A1 Sulfonium salt compound, resist composition comprising the same and pattern forming method using the composition NEC CORPORATION (JP) 2001-07-04 EP disclosed