⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5723675 | 0.84 | CES2 (0.39) | — | |
| SCHEMBL7890610 | 0.77 | TDP1 (0.39) | — | |
| SCHEMBL6363602 | 0.77 | — | — | |
| SCHEMBL277329 | 0.74 | — | — | |
| SCHEMBL276239 | 0.74 | — | — | |
| SCHEMBL277242 | 0.74 | — | — | |
| SCHEMBL859738 | 0.74 | — | — | |
| SCHEMBL8897022 | 0.72 | TDP1 (0.37) | — | |
| Hydrochloric Acid SCHEMBL2585291 | 0.72 | ACLY (0.46) | — | |
| SCHEMBL1114619 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1727997-A | Novel sulfonium salt compound capable of being used as photosensitive acid generator and preparation method thereof | HUATAI CHEMICAL CO LTD CHANGZH (CN) | 2006-02-01 | — | — | CN | disclosed |
| US-6849384-B2 | Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions | NEC CORPORATION (JP) | 2005-02-01 | — | — | US | disclosed |
| US-6638685-B2 | Resolution, sensitivity and smoothness on side surfaces of a transferred pattern; photolithography | NEC CORPORATION (JP) | 2003-10-28 | — | — | US | disclosed |
| US-20030198889-A1 | Photoacid generators, photoresist compositions containing the same and pattering method with the use of the compositions | NEC CORPORATION (JP) | 2003-10-23 | — | — | US | disclosed |
| US-6602647-B2 | Photo acid generator with high transparency and excellent heat stability in a photoresist for lithography using far ultraviolet light, especially light of ArF excimer consists of a cyclic sulfonium compound with 2-oxo group | NEC CORPORATION (JP) | 2003-08-05 | — | — | US | disclosed |
| US-20020182535-A1 | Photoacid generator containing two kinds of sulfonium salt compound, chemically amplified resist containing the same and pattern transfer method | NEC CORPORATION (JP) | 2002-12-05 | — | — | US | disclosed |
| US-20020045122-A1 | Sulfonium salt compound and resist composition and pattern forming method using the same | NEC CORPORATION | 2002-04-18 | — | — | US | disclosed |
| EP-1113334-A1 | Sulfonium salt compound, resist composition comprising the same and pattern forming method using the composition | NEC CORPORATION (JP) | 2001-07-04 | — | — | EP | disclosed |