Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TET2 | Q6N021 | 4/20 | 0.34 |
| ▸ | TET3 | O43151 | 1/20 | 0.32 |
| ▸ | TET1 | Q8NFU7 | 1/20 | 0.32 |
| ▸ | TBXAS1 | P24557 | 2/20 | 0.32 |
| ▸ | GRIK1 | P39086 | 1/20 | 0.31 |
| ▸ | GRIK2 | Q13002 | 1/20 | 0.31 |
| ▸ | GRM1 | Q13255 | 1/20 | 0.31 |
| ▸ | GRM2 | Q14416 | 1/20 | 0.31 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.31 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL399699 | 0.81 | TET2 (0.37) | TET2TET3TET1TBXAS1GRIK1 | |
| SCHEMBL225184 | 0.73 | TBXAS1 (0.39) | TET2TET3TET1TBXAS1GRIK1 | |
| SCHEMBL1581340 | 0.72 | TET2 (0.31) | TET2 | |
| SCHEMBL8465355 | 0.72 | TET2 (0.31) | TET2 | |
| SCHEMBL8468384 | 0.72 | TET2 (0.31) | TET2 | |
| SCHEMBL23413448 | 0.71 | TET2 (0.33) | TET2TET3TET1TBXAS1GRIK1 | |
| SCHEMBL809453 | 0.71 | TBXAS1 (0.41) | TET2TET3TET1TBXAS1GRIK1 | |
| SCHEMBL273086 | 0.71 | TET2 (0.46) | TET2TET3TET1TBXAS1GRIK1 | |
| SCHEMBL23413403 | 0.68 | TET2 (0.31) | TET2 | |
| SCHEMBL809290 | 0.68 | TBXAS1 (0.39) | TET2TBXAS1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6887649-B2 | Multi-layered resist structure and manufacturing method of semiconductor device | FUJITSU LIMITED (JP) | 2005-05-03 | — | — | US | disclosed |
| US-20020192595-A1 | Multi-layered resist structure and manufacturing method of semiconductor device | FUJITSU LIMITED (JP) | 2002-12-19 | — | — | US | disclosed |