Trifluoromethanesulfonic Acid

Trifluoromethanesulfonic Acid

SCHEMBL63998

CC(C)(C)Oc1ccc([S+](c2ccccc2)c2ccc(OC(C)(C)C)cc2)cc1.O=S(=O)([O-])C(F)(F)F

nearest known ligand 0.37

Full drug profile on Sugi Atlas →

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
GPR3 P46089 2/20 0.37
KCNH2 Q12809 3/20 0.34
ACHE P22303 5/20 0.33
CNR2 P34972 1/20 0.32
NR3C1 P04150 1/20 0.32
KEAP1 Q14145 1/20 0.32
NFE2L2 Q16236 1/20 0.32
PPARA Q07869 1/20 0.32
HSD11B1 P28845 1/20 0.31
PTPN1 P18031 1/20 0.31
KIF11 P52732 1/20 0.31
RORC P51449 1/20 0.31
IDH1 O75874 1/20 0.31
FFAR4 Q5NUL3 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Trifluoromethanesulfonic Acid SCHEMBL64048 1.00 GPR3 (0.37) GPR3KCNH2ACHECNR2NR3C1
Trifluoromethanesulfonic Acid SCHEMBL66112 0.94 GPR3 (0.34) GPR3KCNH2ACHEHSD11B1PTPN1
Trifluoromethanesulfonic Acid SCHEMBL8436100 0.90 KCNH2 (0.32) GPR3KCNH2ACHE
SCHEMBL8316981 0.89 PPARA (0.33) PPARAKIF11
SCHEMBL8320141 0.89 PPARA (0.33) PPARAKIF11
Trifluoromethanesulfonic Acid SCHEMBL5619591 0.88 PPARA (0.34) KEAP1NFE2L2PPARAHSD11B1PTPN1
Trifluoromethanesulfonic Acid SCHEMBL3964223 0.88 PPARA (0.34) KEAP1NFE2L2PPARAHSD11B1PTPN1
Trifluoromethanesulfonic Acid SCHEMBL8862157 0.88 BCHE (0.40) GPR3KCNH2ACHERORCFFAR4
Trifluoromethanesulfonic Acid SCHEMBL6762567 0.87 GPR3 (0.35) GPR3KCNH2ACHENR3C1PTPN1
SCHEMBL548225 0.87 CA1 (0.33) HSD11B1RORC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 807 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2026-05-28 US disclosed
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2026-04-02 US disclosed
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-03-24 US disclosed
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
EP-4664197-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING FILM, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-12-17 EP disclosed
US-12448485-B2 Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-10-21 US disclosed
US-20250298315-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN COATING, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-25 US disclosed
EP-4617775-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE RESIN FILM, PHOTOSENSITIVE DRY FILM, PATTERN FORMING METHOD, AND LIGHT-EMITTING ELEMENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-09-17 EP disclosed
EP-4610254-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT ADEKA CORPORATION (JP) 2025-09-03 EP disclosed
US-5972559-A A PHOTORESIST MIXTURE COMPRISING AN ORGANIC SOLVENT, A COPOLYCARBONS BASE RESIN, A PHOTOACID GENERATOR, AND AN AROMATIC ALKYLENE CARBOXYLIC ACID COMPOUND; FOR IMPROVING THE FOOTING ON NITRIDE FILM SUBSTRATES AND POST EXPOSURE DELAY SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed
US-5942367-A HIGH SENSITIVITY, RESOLUTION SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-08-24 US disclosed
EP-0908783-A1 Resist compositions, their preparation and use for patterning processes SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
EP-0908473-A1 Styrene polymers, chemically-amplified positive resist compositions, their preparation and use in a patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-04-14 EP disclosed
US-5876900-A POLYHYDROXYSTYRENE POLYMER SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-03-02 US disclosed
EP-0887705-A1 Resist compositions SHIN-ETSU CHEMICAL CO., LTD. (JP) 1998-12-30 EP disclosed
EP-0646568-B1 Tertiary butyl 4,4-bis(4'-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same SHINETSU CHEMICAL CO (JP) 1998-12-23 EP disclosed
US-5679496-A CONTAINING SULFONIUM SALT HAVING TERT-BUTOXYCARBONYLMETHOXY GROUP(S) AS ACID LABILE GROUPS; SENSITIVITY, RESOLUTION, ETCH AND HEAT RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 1997-10-21 US disclosed
EP-0646568-A2 Tertiary butyl 4,4-bis(4'-hydroxyphenyl) pentanoate derivatives and positive resist materials containing the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 1995-04-05 EP disclosed
EP-0615163-A1 Onium salts and positive resist materials using the same Shin-Etsu Chemical Co., Ltd. (JP) 1994-09-14 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 GPR3 4109/4885KCNH2 541/4885ACHE 1983/4885
US-20260146026-A1 COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT CBR3, CBR1, NOTUM GPR3 3108/4885KCNH2 543/4885ACHE 1292/4885
US-20260093178-A1 POLYMER, METHOD OF PRODUCING THE SAME, RESIST COMPOSITION INCLUDING THE POLYMER, AND PATTERN FORMATION METHOD USING THE RESIST COMPOSITION RPS21, CA11, RPL21 GPR3 4005/4885KCNH2 2679/4885ACHE 4822/4885
US-12583973-B2 Polyimide-based polymer, positive photosensitive resin composition, negative photosensitive resin composition, patterning method, method for forming cured film, interlayer insulating film, surface protective film, and electronic component PRDM9, ARCN1, PUF60 GPR3 3596/4885KCNH2 281/4885ACHE 3906/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.