Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX1 | P07099 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.36 |
| ▸ | NPC1 | O15118 | 2/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.32 |
| ▸ | RAB9A | P51151 | 1/20 | 0.32 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.30 |
| ▸ | HTT | P42858 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10388573 | 0.85 | NOS2 (0.37) | MAPTKMT2A | |
| SCHEMBL2317859 | 0.85 | — | — | |
| SCHEMBL11699976 | 0.78 | EPHX1 (0.37) | EPHX1MAPTNPC1ALDH1A1RAB9A | |
| SCHEMBL14943246 | 0.77 | CHRNB2 (0.42) | EPHX1MAPTNPC1ALDH1A1MEN1 | |
| SCHEMBL135662 | 0.74 | LMNA (0.48) | EPHX1MAPTNPC1RAB9ASMN1; SMN2 | |
| SCHEMBL265529 | 0.74 | LMNA (0.48) | EPHX1MAPTNPC1RAB9ASMN1; SMN2 | |
| SCHEMBL1690524 | 0.74 | EPHX1 (0.38) | EPHX1MAPTNPC1ALDH1A1RAB9A | |
| SCHEMBL14942466 | 0.74 | EPHX1 (0.38) | EPHX1MAPTNPC1ALDH1A1RAB9A | |
| SCHEMBL135660 | 0.74 | LMNA (0.48) | EPHX1MAPTNPC1RAB9ASMN1; SMN2 | |
| SCHEMBL524914 | 0.74 | EPHX1 (0.38) | EPHX1MAPTNPC1ALDH1A1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 750 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8609889-B2 | Photoacid generator, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-12-17 | — | — | US | claimed |
| EP-1710230-B1 | Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2013-08-14 | — | — | EP | claimed |
| EP-1780199-B1 | Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2012-02-01 | — | — | EP | claimed |
| EP-1780198-B1 | Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process | SHINETSU CHEMICAL CO (JP) | 2011-10-05 | — | — | EP | claimed |
| US-20240210822-A1 | SWITCHABLE SUBSTRATE FOR EXTREME ULTRAVIOLET OR E-BEAM METALLIC RESIST | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-06-27 | — | — | US | disclosed |
| CN-114660896-B | Composition for forming silicon-containing resist underlayer film, pattern forming method, and silicon compound | 信越化学工业株式会社 | 2024-06-11 | — | — | CN | disclosed |
| US-12001138-B2 | Composition for forming silicon-containing resist underlayer film and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-06-04 | — | — | US | disclosed |
| US-11953827-B2 | Molecular resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-04-09 | — | — | US | disclosed |
| CN-117826534-A | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2024-04-05 | — | — | CN | disclosed |
| US-20240103370-A1 | Composition For Forming Adhesive Film, Patterning Process, And Method For Forming Adhesive Film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-28 | — | — | US | disclosed |
| US-20240103365-A1 | Pattern Forming Method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2024-03-28 | — | — | US | disclosed |
| EP-3680275-B1 | THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2024-03-06 | — | — | EP | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1096317-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20240103365-A1 | Pattern Forming Method | ICAM1, CDH1, PTK2 | EPHX1 850/4885MAPT 293/4885NPC1 4628/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.