Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | EPHX2 | P34913 | 1/20 | 0.42 |
| ▸ | FAAH | O00519 | 4/20 | 0.38 |
| ▸ | PRKCA | P17252 | 1/20 | 0.37 |
| ▸ | MGLL | Q99685 | 2/20 | 0.37 |
| ▸ | S1PR2 | O95136 | 1/20 | 0.36 |
| ▸ | S1PR1 | P21453 | 1/20 | 0.36 |
| ▸ | S1PR3 | Q99500 | 1/20 | 0.36 |
| ▸ | CA2 | P00918 | 2/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.35 |
| ▸ | CES1 | P23141 | 2/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL64005 | 0.98 | EPHX2 (0.40) | EPHX2FAAHPRKCAMGLLS1PR2 | |
| SCHEMBL28510270 | 0.83 | APP (0.36) | — | |
| SCHEMBL64832 | 0.81 | KMT2A (0.30) | KMT2A | |
| SCHEMBL8931625 | 0.79 | FAAH (0.56) | EPHX2FAAHCA2CES1CA1 | |
| SCHEMBL496699 | 0.79 | FAAH (0.56) | EPHX2FAAHCA2CES1CA1 | |
| SCHEMBL150843 | 0.79 | FAAH (0.56) | EPHX2FAAHCA2CES1CA1 | |
| SCHEMBL7520221 | 0.79 | FAAH (0.56) | EPHX2FAAHCA2CES1CA1 | |
| SCHEMBL22608765 | 0.79 | FAAH (0.56) | EPHX2FAAHCA2CES1CA1 | |
| SCHEMBL199732 | 0.79 | FAAH (0.56) | EPHX2FAAHCA2CES1CA1 | |
| SCHEMBL1486856 | 0.79 | FAAH (0.56) | EPHX2FAAHCA2CES1CA1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 355 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| EP-2384457-B1 | COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-06 | — | — | EP | disclosed |
| CN-108693713-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2022-06-03 | — | — | CN | disclosed |
| CN-106103396-B | Compound, resin, material for forming underlayer film for lithography, pattern formation method, and method for purifying compound or resin | 三菱瓦斯化学株式会社 | 2021-11-30 | — | — | CN | disclosed |
| CN-107949808-B | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, and method for producing same | 三菱瓦斯化学株式会社 | 2021-10-22 | — | — | CN | disclosed |
| CN-108137478-B | Compound, composition thereof, purification method, resist pattern formation method, and amorphous film production method | 三菱瓦斯化学株式会社 | 2021-09-28 | — | — | CN | disclosed |
| CN-108693705-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2021-07-13 | — | — | CN | disclosed |
| CN-107848983-B | Compound, resin, material for forming underlayer film for lithography, resist pattern, method for forming circuit pattern, and method for purifying resist pattern | 三菱瓦斯化学株式会社 | 2021-07-09 | — | — | CN | disclosed |
| US-6284429-B1 | FOR FORMULATING PHOTORESISTS HAVING SENSITIVITY, RESOLUTION, ETCHING RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-04 | — | — | US | disclosed |
| US-6280898-B1 | PHOTORESISTS PATTERNS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-28 | — | — | US | disclosed |
| EP-1096317-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | EPHX2 588/4885FAAH 3026/4885PRKCA 1600/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.