SCHEMBL64832

SCHEMBL64832

CCS(=O)(=O)O.O=C1CCC(=O)N1O

nearest known ligand 0.30

Known targets — ChEMBL curated mechanism

FGFR1FGFR2FGFR3FGFR4FLT1FLT4KDRPDGFRAPDGFRB

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL65688 0.87 MEN1 (0.32) KMT2A
SCHEMBL8058954 0.86 CA12 (0.32)
SCHEMBL64827 0.85 PARL (0.31)
Sulfuric Acid SCHEMBL4450384 0.85 CA5A (0.35)
Propane SCHEMBL28183675 0.85 LMNA (0.33)
Sulfuric Acid SCHEMBL28950378 0.85 CA5A (0.35)
SCHEMBL64005 0.82 EPHX2 (0.40) KMT2A
Alcohol SCHEMBL20856433 0.82 ALDH1A1 (0.33)
SCHEMBL64127 0.81 EPHX2 (0.42) KMT2A
Ethyl Chloride SCHEMBL28823879 0.80 LMNA (0.31)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 358 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-08 US disclosed
EP-4675357-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2026-01-07 EP disclosed
CN-119331250-A Silicon-containing bottom anti-reflection coating composition and preparation method and application thereof 福建泓光半导体材料有限公司 2025-01-21 CN disclosed
CN-119264435-A Organosilicon polymer, silicon-containing bottom anti-reflection coating composition, and preparation methods and applications thereof 福建泓光半导体材料有限公司 2025-01-07 CN disclosed
CN-118444529-A Bottom anti-reflection coating composition, preparation method thereof, and formation method and application of photoetching pattern 安徽恒坤新材料科技有限公司 2024-08-06 CN disclosed
CN-118444530-A Bottom anti-reflection coating composition, preparation method thereof, and formation method and application of photoresist pattern 安徽恒坤新材料科技有限公司 2024-08-06 CN disclosed
EP-3382453-B1 RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM SHINETSU CHEMICAL CO (JP) 2023-09-20 EP disclosed
EP-2384457-B1 COATING COMPOSITIONS MERCK PATENT GMBH (DE) 2022-07-06 EP disclosed
CN-108693713-B Resist underlayer film material, pattern formation method, and resist underlayer film formation method 信越化学工业株式会社 2022-06-03 CN disclosed
CN-106103396-B Compound, resin, material for forming underlayer film for lithography, pattern formation method, and method for purifying compound or resin 三菱瓦斯化学株式会社 2021-11-30 CN disclosed
US-6284429-B1 FOR FORMULATING PHOTORESISTS HAVING SENSITIVITY, RESOLUTION, ETCHING RESISTANCE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-09-04 US disclosed
US-6280898-B1 PHOTORESISTS PATTERNS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-28 US disclosed
EP-1096318-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-05-02 EP disclosed
EP-1096317-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-05-02 EP disclosed
EP-1085377-A1 Resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-03-21 EP disclosed
EP-1053985-A1 Resist compositions and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2000-11-22 EP disclosed
US-6147249-A ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-11-14 US disclosed
EP-1031879-A1 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-08-30 EP disclosed
EP-1004568-A2 Novel ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2000-05-31 EP disclosed
US-5972560-A A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING SHIN-ETSU CHEMICAL CO., LTD. (JP) 1999-10-26 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20260008932-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS ASH2L, ALKBH2, ITGA1 KMT2A 536/4885TDP1 1541/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.