SCHEMBL64561

SCHEMBL64561

COC(=O)C(C)CN1CCCC1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CHRM2 P08172 2/20 0.46
ADRA2B P18089 2/20 0.46
DRD3 P35462 2/20 0.46
SIGMAR1 Q99720 2/20 0.46
HRH3 Q9Y5N1 2/20 0.46
ALDH1A1 P00352 4/20 0.45
LMNA P02545 2/20 0.45
CYP2D6 P10635 2/20 0.44
ADRA2C P18825 1/20 0.44
CHRM3 P20309 1/20 0.44
OPRD1 P41143 1/20 0.44
KCNH2 Q12809 1/20 0.44
POLB P06746 1/20 0.42
PADI1 Q9ULC6 1/20 0.41
PADI4 Q9UM07 1/20 0.41
SMYD3 Q9H7B4 1/20 0.40
MEN1 O00255 1/20 0.40
KMT2A Q03164 1/20 0.40
CHRM1 P11229 1/20 0.40
MAPT P10636 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9774559 0.98 CHRM2 (0.49) CHRM2ADRA2BDRD3SIGMAR1HRH3
SCHEMBL23886458 0.96 CHRM2 (0.42) CHRM2ADRA2BDRD3SIGMAR1HRH3
SCHEMBL2968891 0.85 CHRM2 (0.45) CHRM2ADRA2BDRD3SIGMAR1HRH3
SCHEMBL18167012 0.85 POLB (0.43) ALDH1A1CYP2D6POLBMAPTSMN1; SMN2
SCHEMBL12285113 0.85 KDM4E (0.40) ALDH1A1LMNACYP2D6PADI1PADI4
SCHEMBL16267241 0.83 PADI1 (0.55) SIGMAR1ALDH1A1LMNACYP2D6CHRM3
SCHEMBL1816293 0.83 ALDH1A1 (0.64) ALDH1A1LMNAMAPTSMN1; SMN2MITF
SCHEMBL12251157 0.83 PADI1 (0.55) SIGMAR1ALDH1A1LMNACYP2D6CHRM3
SCHEMBL14451893 0.83 ALDH1A1 (0.44) CHRM2ADRA2BDRD3SIGMAR1HRH3
SCHEMBL25322115 0.82 CHRM2 (0.49) CHRM2ADRA2BDRD3SIGMAR1HRH3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 457 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4660703-A2 METAL-CONTAINING FILM PATTERNING PROCESS Shin-Etsu Chemical Co., Ltd. (JP) 2025-12-10 EP disclosed
US-12032287-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-07-09 US disclosed
US-11994798-B2 Resist material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
EP-3084152-B1 FLUORINATED OLEFINS AS WORKING FLUIDS AND METHODS OF USING SAME 3M INNOVATIVE PROPERTIES COMPANY (US) 2023-05-31 EP disclosed
US-20210063873-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-20210063871-A1 RESIST MATERIAL AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-03-04 US disclosed
US-10557069-B2 Fluorinated olefins as working fluids and methods of using same 3M INNOVATIVE PROPERTIES COMPANY (US) 2020-02-11 US disclosed
US-20190225852-A1 FLUORINATED OLEFINS AS WORKING FLUIDS AND METHODS OF USING SAME 3M INNOVATIVE PROPERTIES CO (US) 2019-07-25 US disclosed
US-10280351-B2 Fluorinated olefins as working fluids and methods of using same 3M INNOVATIVE PROPERTIES COMPANY (US) 2019-05-07 US disclosed
US-20180320040-A1 FLUORINATED OLEFINS AS WORKING FLUIDS AND METHODS OF USING SAME 3M INNOVATIVE PROPERTIES COMPANY 2018-11-08 US disclosed
US-20020150835-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-10-17 US disclosed
US-20020132182-A1 Polymers, resist materials, and pattern formation method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-19 US disclosed
EP-1236745-A2 Silicon-containing polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-09-04 EP disclosed
US-20020115807-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020115821-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-22 US disclosed
US-20020102493-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-08-01 US disclosed
US-20020098443-A1 Amine compounds, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-07-25 US disclosed
US-20020061463-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-23 US disclosed
EP-1195390-A1 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-10 EP disclosed
US-4985556-A INTERMEDIATES AGENCY OF INDUSTRIAL SCIENCE & TECHNOLOGY (JP) 1991-01-15 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020098443-A1 Amine compounds, resist compositions and patterning process PARG, EHMT1, EHMT2 CHRM2 1996/4885ADRA2B 3301/4885DRD3 1089/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.