SCHEMBL6465332

SCHEMBL6465332

CCCCCCCCCCCCSCC(=O)c1ccccc1

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.58
GMNN O75496 1/20 0.58
TP53 P04637 1/20 0.58
POLB P06746 1/20 0.58
THRB P10828 1/20 0.58
CYP2C9 P11712 1/20 0.58
BLM P54132 1/20 0.58
HSD17B10 Q99714 1/20 0.58
ALDH1A1 P00352 2/20 0.56
CES2 O00748 5/20 0.53
CES1 P23141 6/20 0.50
NAAA Q02083 1/20 0.49
HDAC3 O15379 1/20 0.47
HDAC4 P56524 1/20 0.47
HDAC1 Q13547 1/20 0.47
HDAC7 Q8WUI4 1/20 0.47
HDAC2 Q92769 1/20 0.47
HDAC10 Q969S8 1/20 0.47
HDAC11 Q96DB2 1/20 0.47
HDAC8 Q9BY41 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14998165 1.00 MAPT (0.58) MAPTGMNNTP53POLBTHRB
SCHEMBL28437029 1.00 MAPT (0.58) MAPTGMNNTP53POLBTHRB
SCHEMBL15457916 1.00 MAPT (0.58) MAPTGMNNTP53POLBTHRB
SCHEMBL2522380 0.98 ALDH1A1 (0.58) MAPTGMNNTP53POLBTHRB
SCHEMBL8756244 0.93 ALDH1A1 (0.59) MAPTGMNNTP53POLBTHRB
SCHEMBL18737489 0.89 SMN1; SMN2 (0.57) MAPTGMNNTP53POLBTHRB
SCHEMBL9622162 0.89 MAPT (0.53) MAPTGMNNTP53POLBTHRB
SCHEMBL3357504 0.85 L3MBTL1 (0.55) MAPTGMNNTP53POLBTHRB
SCHEMBL17399693 0.85 HSD17B3 (0.63) MAPTGMNNTP53POLBTHRB
SCHEMBL18737683 0.83 HDAC3 (0.50) MAPTGMNNTP53POLBTHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2356517-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORP (JP) 2017-01-25 EP disclosed
US-9551935-B2 Pattern forming method and resist composition FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
EP-1580598-B1 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORP (JP) 2016-10-12 EP disclosed
EP-1536285-B1 Photosensitive composition, compound for use in the photosensitive composition, and pattern forming method using the photosensitive composition FUJIFILM CORP (JP) 2016-01-06 EP disclosed
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-9116437-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-08-25 US disclosed
US-9051403-B2 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJIFILM CORPORATION (JP) 2015-06-09 US disclosed
US-9023576-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2015-05-05 US disclosed
US-9017917-B2 Resist composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2015-04-28 US disclosed
US-8999621-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 US disclosed
US-20100297553-A1 POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-11-25 US disclosed
US-20100183980-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-07-22 US disclosed
EP-1972641-A2 Resist composition and pattern-forming method using same FUJIFILM Corporation (JP) 2008-09-24 EP disclosed
US-7351515-B2 Positive resist composition and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2008-04-01 US disclosed
EP-1835343-A1 Positive resist composition and pattern formation method using the positive resist composition FUJIFILM Corporation (JP) 2007-09-19 EP disclosed
US-7202014-B2 Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition FUJIFILM CORPORATION (JP) 2007-04-10 US disclosed
EP-1767992-A1 Positive resist composition for immersion exposure and pattern forming method using the same FUJIFILM Corporation (JP) 2007-03-28 EP disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-6863701-B2 Accelerators for cationic photopolymerizations RENSSELAER POLYTECHNIC INSTITUTE (US) 2005-03-08 US disclosed
US-4399075-A Process for producing chlorinated phenoxytoluene derivatives ASAHI CHEMICAL COMPANY, LIMITED (JP) 1983-08-16 US disclosed