SCHEMBL646824

SCHEMBL646824

CO[Si](CCC[Si](OC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.33
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
KCNA3 P22001 1/20 0.31
LTA4H P09960 1/20 0.30
POLB P06746 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703898 0.95 CA4 (0.33) CA4ESR1ESR2KCNA3LTA4H
SCHEMBL30690854 0.93 CA4 (0.32) CA4ESR1ESR2KCNA3
SCHEMBL30690859 0.93 CA4 (0.32) CA4ESR1ESR2KCNA3
SCHEMBL647415 0.91 CA4 (0.36) CA4ESR1ESR2LTA4HPOLB
SCHEMBL2655578 0.90 LTA4H (0.37) LTA4H
SCHEMBL24433793 0.88 KIF11 (0.37)
SCHEMBL705038 0.84 TP53 (0.32) CA4ESR1ESR2LTA4H
SCHEMBL647836 0.81 CA4 (0.36) CA4ESR1ESR2KCNA3LTA4H
SCHEMBL705542 0.79 CA4 (0.35) CA4ESR1ESR2LTA4HPOLB
SCHEMBL646950 0.78 TSHR (0.33) LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 116 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10474032-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-12 US disclosed
US-9437431-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-09-06 US disclosed
EP-1720075-B1 Coating compositions ROHM & HAAS ELECT MAT (US) 2016-03-02 EP disclosed
US-20150072290-A1 COATING COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2015-03-12 US disclosed
US-8911927-B2 Compositions and processes for immersion lithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-12-16 US disclosed
US-8889344-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-11-18 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
US-8263316-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-09-11 US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 US disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
US-20030008244-A1 Porous optical materials SHIPLEY COMPANY, L.L.C. (US) 2003-01-09 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed
EP-1265080-A2 Porous optical materials Shipley Company LLC (US) 2002-12-11 EP disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed