SCHEMBL703898

SCHEMBL703898

CO[Si](CCCC[Si](OC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.33

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
CA4 P22748 1/20 0.33
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
KCNA3 P22001 1/20 0.31
LTA4H P09960 1/20 0.30
POLB P06746 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30690859 0.98 CA4 (0.32) CA4ESR1ESR2KCNA3
SCHEMBL30690854 0.98 CA4 (0.32) CA4ESR1ESR2KCNA3
SCHEMBL646824 0.95 CA4 (0.33) CA4ESR1ESR2KCNA3LTA4H
SCHEMBL647415 0.91 CA4 (0.36) CA4ESR1ESR2LTA4HPOLB
SCHEMBL2655578 0.90 LTA4H (0.37) LTA4H
SCHEMBL24433793 0.88 KIF11 (0.37)
SCHEMBL705038 0.84 TP53 (0.32) CA4ESR1ESR2LTA4H
SCHEMBL647836 0.81 CA4 (0.36) CA4ESR1ESR2KCNA3LTA4H
SCHEMBL705542 0.79 CA4 (0.35) CA4ESR1ESR2LTA4HPOLB
SCHEMBL703253 0.78 LTA4H (0.32) LTA4H

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed