Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TP53 | P04637 | 1/20 | 0.32 |
| ▸ | CA4 | P22748 | 1/20 | 0.32 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.31 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | HPGD | P15428 | 1/20 | 0.31 |
| ▸ | LTA4H | P09960 | 1/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | MEN1 | O00255 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.31 |
| ▸ | ESR1 | P03372 | 1/20 | 0.30 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL647415 | 0.89 | CA4 (0.36) | TP53CA4ALDH1A1HPGDLTA4H | |
| SCHEMBL2655578 | 0.88 | LTA4H (0.37) | LTA4H | |
| SCHEMBL646824 | 0.84 | CA4 (0.33) | CA4LTA4HESR1ESR2 | |
| SCHEMBL703898 | 0.84 | CA4 (0.33) | CA4LTA4HESR1ESR2 | |
| SCHEMBL30690854 | 0.83 | CA4 (0.32) | CA4ESR1ESR2 | |
| SCHEMBL30690859 | 0.83 | CA4 (0.32) | CA4ESR1ESR2 | |
| SCHEMBL705542 | 0.82 | CA4 (0.35) | TP53CA4ALDH1A1LTA4HESR1 | |
| SCHEMBL705338 | 0.81 | LTA4H (0.38) | CA4LTA4HESR1 | |
| SCHEMBL705234 | 0.81 | LTA4H (0.32) | TP53KDM4EALDH1A1GAAHPGD | |
| SCHEMBL27996306 | 0.80 | CA4 (0.35) | TP53CA4LTA4HESR1ESR2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | claimed |
| CN-115181223-B | Low-gloss matte auxiliary agent, preparation method thereof and molded body | 铨盛聚碳科技股份有限公司 | 2023-08-29 | — | — | CN | disclosed |
| CN-115181223-A | Low-gloss matte auxiliary agent, preparation method thereof and formed body | 铨盛聚碳科技股份有限公司 | 2022-10-14 | — | — | CN | disclosed |
| CN-114085382-A | Hydrogen-containing poly titanium boron siloxane flame retardant, and preparation method and application thereof | 铨盛聚碳科技股份有限公司 | 2022-02-25 | — | — | CN | disclosed |
| US-9546237-B2 | Stabilization of polymers that contain a hydrolyzable functionality | BRIDGESTONE CORPORATION (JP) | 2017-01-17 | — | — | US | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20130331520-A1 | STABILIZATION OF POLYMERS THAT CONTAIN A HYDROLYZABLE FUNCTIONALITY | BRIDGESTONE CORPORATION (JP) | 2013-12-12 | — | — | US | disclosed |
| CN-101641767-B | Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device | FUJITSU LTD | 2013-10-30 | — | — | CN | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7604866-B2 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2009-10-20 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |
| US-20060269724-A1 | Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2006-11-30 | — | — | US | disclosed |
| CN-1809764-A | Antireflective film | ASAHI CHEMICAL IND (JP) | 2006-07-26 | — | — | CN | disclosed |
| CN-1651159-A | Cleaning CVD chambers following deposition of porogen-containing materials | AIR PROD & CHEM (US) | 2005-08-10 | — | — | CN | disclosed |
| US-20040077757-A1 | Coating composition for use in producing an insulating thin film | ASAHI KASEI KABUSHIKI KAISHA (JP) | 2004-04-22 | — | — | US | disclosed |
| EP-1117102-A2 | Method of manufacturing material for forming insulating film | JSR Corporation (JP) | 2001-07-18 | — | — | EP | disclosed |