SCHEMBL647413

SCHEMBL647413

CCO[Si](CC[Si](OCC)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.34

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 1/20 0.34
TP53 P04637 2/20 0.33
RELA Q04206 1/20 0.31
NPSR1 Q6W5P4 1/20 0.31
ESR1 P03372 1/20 0.31
ESR2 Q92731 1/20 0.31
ALDH1A1 P00352 2/20 0.31
TSHR P16473 2/20 0.31
KDM4E B2RXH2 1/20 0.31
NPC1 O15118 1/20 0.31
HPGD P15428 1/20 0.31
RAB9A P51151 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
PKM P14618 1/20 0.31
L3MBTL1 Q9Y468 2/20 0.31
KCNH2 Q12809 1/20 0.31
GLA P06280 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL703253 0.91 LTA4H (0.32) LTA4HTP53HPGDSMN1; SMN2
SCHEMBL705234 0.91 LTA4H (0.32) LTA4HTP53ALDH1A1KDM4EHPGD
SCHEMBL646950 0.91 TSHR (0.33) LTA4HTP53TSHRHPGDSMN1; SMN2
SCHEMBL3481751 0.88 LTA4H (0.36) LTA4HNPSR1ALDH1A1TSHR
SCHEMBL646811 0.86 LTA4H (0.34) LTA4HTP53RELANPSR1ESR1
SCHEMBL708759 0.86 LTA4H (0.34) LTA4HTP53RELANPSR1ESR1
SCHEMBL7910674 0.86 LTA4H (0.37) LTA4HKCNH2
SCHEMBL10612613 0.85 MAOA (0.34) ESR1ESR2KCNH2
SCHEMBL14956666 0.83 L3MBTL1 (0.32) L3MBTL1
SCHEMBL4079890 0.83 LTA4H (0.32) LTA4HTP53

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 117 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10474032-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-12 US disclosed
US-9437431-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-09-06 US disclosed
EP-1720075-B1 Coating compositions ROHM & HAAS ELECT MAT (US) 2016-03-02 EP disclosed
US-20150072290-A1 COATING COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2015-03-12 US disclosed
US-8911927-B2 Compositions and processes for immersion lithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-12-16 US disclosed
US-8889344-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-11-18 US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 US disclosed
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 US disclosed
US-8263316-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-09-11 US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 US disclosed
EP-1312649-A2 Stable composition Shipley Co. L.L.C. (US) 2003-05-21 EP disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 US disclosed
US-20030008244-A1 Porous optical materials SHIPLEY COMPANY, L.L.C. (US) 2003-01-09 US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 EP disclosed
EP-1265080-A2 Porous optical materials Shipley Company LLC (US) 2002-12-11 EP disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed