SCHEMBL647737

SCHEMBL647737

CCOc1cccc([SiH2]CCC[SiH2]c2cccc(OCC)c2OCC)c1OCC

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ ALDH1A1 P00352 2/20 0.39
▸ L3MBTL1 Q9Y468 7/20 0.38
▸ HTR1A P08908 1/20 0.35
▸ ADRA1D P25100 1/20 0.35
▸ ADRA1A P35348 1/20 0.35
▸ ADRA1B P35368 1/20 0.35
▸ SMN1; SMN2 Q16637 1/20 0.35
▸ MAPT P10636 3/20 0.35
▸ NPSR1 Q6W5P4 1/20 0.35
▸ GLA P06280 1/20 0.35
▸ LMNA P02545 2/20 0.34
▸ CHRM2 P08172 2/20 0.34
▸ KDM4E B2RXH2 2/20 0.34
▸ MEN1 O00255 2/20 0.34
▸ KMT2A Q03164 2/20 0.34
▸ TDP1 Q9NUW8 2/20 0.34
▸ CHRM1 P11229 1/20 0.34
▸ ALOX15 P16050 1/20 0.34
▸ TSHR P16473 1/20 0.34
▸ ACHE P22303 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707985 0.97 ALDH1A1 (0.39) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL707161 0.93 ALDH1A1 (0.41) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL9176210 0.92 ALDH1A1 (0.40) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL11350174 0.92 L3MBTL1 (0.37) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL7806968 0.90 ALDH1A1 (0.39) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL9165721 0.89 ALDH1A1 (0.38) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL7128422 0.87 ALDH1A1 (0.41) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL21066803 0.87 ALDH1A1 (0.37) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL28754933 0.86 ALDH1A1 (0.41) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A
SCHEMBL646941 0.86 ALDH1A1 (0.41) ALDH1A1L3MBTL1HTR1AADRA1DADRA1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 116 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10474032-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-12 — — US disclosed
US-9437431-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2016-09-06 — — US disclosed
EP-1720075-B1 Coating compositions ROHM & HAAS ELECT MAT (US) 2016-03-02 — — EP disclosed
US-20150072290-A1 COATING COMPOSITIONS ROHM AND HAAS ELECTRONIC MATERIALS LLC 2015-03-12 — — US disclosed
US-8911927-B2 Compositions and processes for immersion lithography ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-12-16 — — US disclosed
US-8889344-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2014-11-18 — — US disclosed
US-8450045-B2 Pattern forming method JSR CORPORATION (JP) 2013-05-28 — — US disclosed
US-8283260-B2 Process for restoring dielectric properties AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-10-09 — — US disclosed
US-8263316-B2 Electronic device manufacture ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2012-09-11 — — US disclosed
US-20120122036-A1 PATTERN FORMING METHOD JSR CORPORATION (JP) 2012-05-17 — — US disclosed
US-20030008155-A1 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR CORPORATION (JP) 2003-01-09 — — US disclosed
US-20030008244-A1 Porous optical materials SHIPLEY COMPANY, L.L.C. (US) 2003-01-09 — — US disclosed
EP-1267395-A2 Method for the formation of silica film, silica film, insulating film, and semiconductor device JSR Corporation (JP) 2002-12-18 — — EP disclosed
EP-1265080-A2 Porous optical materials Shipley Company LLC (US) 2002-12-11 — — EP disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 — — US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 — — US disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 — — EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 — — US disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 — — EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 — — EP disclosed
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