Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP1A2 | P05177 | 1/20 | 0.37 |
| ▸ | GPR3 | P46089 | 2/20 | 0.36 |
| ▸ | KCNH2 | Q12809 | 9/20 | 0.35 |
| ▸ | NSD2 | O96028 | 1/20 | 0.33 |
| ▸ | NR2F2 | P24468 | 1/20 | 0.33 |
| ▸ | ACHE | P22303 | 5/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3120223 | 0.87 | CYP1A2 (0.32) | CYP1A2 | |
| SCHEMBL3118029 | 0.86 | CA1 (0.31) | CYP1A2 | |
| Trifluoromethanesulfonic Acid SCHEMBL2516940 | 0.84 | MEN1 (0.39) | GPR3KCNH2 | |
| Trifluoromethanesulfonic Acid SCHEMBL645278 | 0.84 | CYP1A2 (0.41) | CYP1A2GPR3KCNH2NSD2NR2F2 | |
| SCHEMBL701579 | 0.83 | CYP1A2 (0.54) | CYP1A2ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL645345 | 0.81 | SLC22A12 (0.40) | GPR3KCNH2 | |
| Trifluoromethanesulfonic Acid SCHEMBL646730 | 0.81 | CTSB (0.40) | GPR3KCNH2 | |
| Trifluoromethanesulfonic Acid SCHEMBL646691 | 0.81 | KCNH2 (0.39) | GPR3KCNH2ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL31168264 | 0.81 | KCNH2 (0.39) | GPR3KCNH2ACHE | |
| SCHEMBL5866137 | 0.78 | PER2 (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 103 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2021106537-A1 | RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD | 富士フイルム株式会社 | 2021-06-03 | — | — | WO | disclosed |
| US-9170492-B2 | Silicon-containing film-forming composition, silicon-containing film, and pattern forming method | JSR CORPORATION (JP) | 2015-10-27 | — | — | US | disclosed |
| US-9140985-B2 | — | — | 2015-09-22 | — | — | US | disclosed |
| US-9134611-B2 | Composition for forming resist underlayer film and pattern-forming method | JSR CORPORATION (JP) | 2015-09-15 | — | — | US | disclosed |
| US-9126231-B2 | Insulation pattern-forming method and insulation pattern-forming material | JSR CORPORATION (JP) | 2015-09-08 | — | — | US | disclosed |
| US-9046769-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20140371466-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-8859191-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8722306-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2014-05-13 | — | — | US | disclosed |
| US-8691496-B2 | Method for forming resist under layer film, pattern forming method and composition for resist under layer film | JSR CORPORATION (JP) | 2014-04-08 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| US-20010014427-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 2001-08-16 | — | — | US | disclosed |
| US-6242161-B1 | ABSORPTION COATINGS USING COPOLYMERS | JSR CORPORATION (JP) | 2001-06-05 | — | — | US | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| US-6187504-B1 | PHOTOSENSITIVE BLEND CONTAINING A NAPHTHALENE SULFONIUM SULFONATE DERIVATIVE PHOTOACID GENERATOR, RESIN HAVING ALKALI INSOLUBLE GROUPS CLEAVABLE BY ACID, AN ALKALI SOLUBLE RESIN AND A SOLUBILITY CONTROL AGENT; POSITIVES, RESOLUTION | JSR CORPORATION (JP) | 2001-02-13 | — | — | US | disclosed |
| US-6180316-B1 | SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS | JSR CORPORATION (JP) | 2001-01-30 | — | — | US | disclosed |
| EP-1048983-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 2000-11-02 | — | — | EP | disclosed |
| EP-1045290-A2 | Composition for resist underlayer film and method for producing the same | JSR Corporation (JP) | 2000-10-18 | — | — | EP | disclosed |
| EP-0930541-A1 | Radiation sensitive resin composition | JSR Corporation (JP) | 1999-07-21 | — | — | EP | disclosed |
| EP-0849634-A1 | Radiation sensitive resin composition | JAPAN SYNTHETIC RUBBER CO., LTD. (JP) | 1998-06-24 | — | — | EP | disclosed |