SCHEMBL6544644

SCHEMBL6544644

O=[N+]([O-])c1cccc(S(=O)(=O)C(S(=O)(=O)c2ccccc2)S(=O)(=O)c2ccccc2)c1

nearest known ligand 0.66

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.66
GAA P10253 2/20 0.66
HTT P42858 1/20 0.66
CA2 P00918 3/20 0.62
CA5A P35218 1/20 0.62
MMP2 P08253 2/20 0.57
CA1 P00915 1/20 0.57
MMP1 P03956 1/20 0.57
MMP9 P14780 1/20 0.57
MMP8 P22894 1/20 0.57
MMP13 P45452 1/20 0.57
MEN1 O00255 1/20 0.55
LMNA P02545 3/20 0.53
TSHR P16473 1/20 0.53
F2 P00734 1/20 0.53
PRSS1 P07477 1/20 0.53
PRSS2 P07478 1/20 0.53
PRSS3 P35030 1/20 0.53
ALDH1A1 P00352 4/20 0.51
DDX3X O00571 1/20 0.51

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6544697 0.85 ALDH1A1 (0.58) KMT2AGAAHTTCA2CA5A
SCHEMBL9398531 0.83 KMT2A (0.66) KMT2AGAAHTTCA2CA5A
SCHEMBL11765302 0.83 KMT2A (0.66) KMT2AGAAHTTCA2CA5A
SCHEMBL3477247 0.82 KMT2A (0.89) KMT2AGAAHTTCA2CA5A
SCHEMBL9805877 0.80 KMT2A (0.62) KMT2AGAAHTTCA2CA5A
SCHEMBL17443262 0.80 CA2 (0.57) KMT2AGAAHTTCA2CA5A
SCHEMBL9580710 0.80 KMT2A (1.00) KMT2AGAAHTTCA2CA5A
Benzene SCHEMBL27935914 0.79 KMT2A (0.70) KMT2AGAAHTTCA2CA5A
SCHEMBL15617618 0.78 KMT2A (0.56) KMT2AGAAHTTCA2CA5A
SCHEMBL205255 0.78 KMT2A (0.75) KMT2AGAAHTTCA2CA5A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040248042-A1 using material having both of dry etching resistance and high transparency in exposure light having a short wavelength such as F2 laser beam DAIKIN INDUSTRIES, LTD. (JP) 2004-12-09 US disclosed
US-20040234899-A1 Method of forming fine pattern SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-11-25 US disclosed
EP-1439422-A1 METHOD OF FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-07-21 EP disclosed
US-20040101787-A1 Fine pattern forming method DAIKIN INDUSTRIES, LTD. (JP) 2004-05-27 US disclosed
EP-1413927-A1 METHOD FOR FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-04-28 EP disclosed
EP-1376230-A1 FINE PATTERN FORMING METHOD Semiconductor Leading Edge Technologies, Inc. (JP) 2004-01-02 EP disclosed
US-6054254-A COATING WITH PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT KABUSHIKI KAISHA TOSHIBA (JP) 2000-04-25 US disclosed
US-5372914-A Pattern forming method KABUSHIKI KAISHA TOSHIBA (JP) 1994-12-13 US disclosed
US-5348838-A Photoresist KABUSHIKI KAISHA TOSHIBA (JP) 1994-09-20 US disclosed