SCHEMBL6544697

SCHEMBL6544697

O=[N+]([O-])c1ccc(S(=O)(=O)C(S(=O)(=O)c2ccccc2)S(=O)(=O)c2ccccc2)cc1

nearest known ligand 0.58

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.58
LMNA P02545 3/20 0.58
CA2 P00918 5/20 0.56
CA12 O43570 4/20 0.56
CA9 Q16790 4/20 0.56
KMT2A Q03164 5/20 0.55
CA1 P00915 4/20 0.53
CA14 Q9ULX7 3/20 0.53
CA3 P07451 2/20 0.53
CA4 P22748 2/20 0.53
CA6 P23280 2/20 0.53
CA5A P35218 2/20 0.53
CA7 P43166 2/20 0.53
CA13 Q8N1Q1 2/20 0.53
CA5B Q9Y2D0 2/20 0.53
HSD11B1 P28845 1/20 0.53
AGTR1 P30556 1/20 0.51
SMN1; SMN2 Q16637 2/20 0.51
MEN1 O00255 3/20 0.50
L3MBTL1 Q9Y468 2/20 0.50

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6543954 0.92 CA2 (0.61) ALDH1A1LMNACA2CA12CA9
SCHEMBL6544644 0.85 KMT2A (0.66) ALDH1A1LMNACA2CA12CA9
SCHEMBL3895943 0.83 AGTR1 (0.64) ALDH1A1LMNACA2CA12CA9
SCHEMBL11655146 0.83 AGTR1 (0.64) ALDH1A1LMNACA2CA12CA9
SCHEMBL4076634 0.82 HTR6 (0.55) ALDH1A1LMNACA2CA12CA9
SCHEMBL6543481 0.82 CA2 (0.52) ALDH1A1CA2CA12CA9KMT2A
SCHEMBL2820495 0.80 ALDH1A1 (0.58) ALDH1A1LMNACA2CA12CA9
SCHEMBL5559803 0.80 ALDH1A1 (0.64) ALDH1A1LMNACA2CA12CA9
SCHEMBL15617707 0.79 KMT2A (0.65) ALDH1A1LMNACA2CA12CA9
SCHEMBL14061940 0.78 CA2 (0.69) ALDH1A1LMNACA2CA12CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20040248042-A1 using material having both of dry etching resistance and high transparency in exposure light having a short wavelength such as F2 laser beam DAIKIN INDUSTRIES, LTD. (JP) 2004-12-09 US disclosed
US-20040234899-A1 Method of forming fine pattern SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-11-25 US disclosed
EP-1439422-A1 METHOD OF FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-07-21 EP disclosed
US-20040101787-A1 Fine pattern forming method DAIKIN INDUSTRIES, LTD. (JP) 2004-05-27 US disclosed
EP-1413927-A1 METHOD FOR FORMING FINE PATTERN Semiconductor Leading Edge Technologies, Inc. (JP) 2004-04-28 EP disclosed
EP-1376230-A1 FINE PATTERN FORMING METHOD Semiconductor Leading Edge Technologies, Inc. (JP) 2004-01-02 EP disclosed
US-6054254-A COATING WITH PHOTORESISTS, EXPOSURE TO LIGHT, DEVELOPMENT KABUSHIKI KAISHA TOSHIBA (JP) 2000-04-25 US disclosed
US-5372914-A Pattern forming method KABUSHIKI KAISHA TOSHIBA (JP) 1994-12-13 US disclosed
US-5348838-A Photoresist KABUSHIKI KAISHA TOSHIBA (JP) 1994-09-20 US disclosed