SCHEMBL6557498

SCHEMBL6557498

OC(C1CC2C=CC1C2)C1CC2CCC1C2

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.41
GAA P10253 1/20 0.41
TDP1 Q9NUW8 1/20 0.41
HPGD P15428 2/20 0.35
LMNA P02545 2/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
EPHX2 P34913 1/20 0.35
KMT2A Q03164 3/20 0.35
POLB P06746 1/20 0.33
KDM4E B2RXH2 1/20 0.32
NPC1 O15118 1/20 0.32
MEN1 O00255 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3821014 0.80 HPGD (0.42) ALDH1A1HPGDLMNASMN1; SMN2KMT2A
SCHEMBL8057665 0.76 EPHX2 (0.43) ALDH1A1GAATDP1LMNAEPHX2
SCHEMBL6557304 0.70 KDM4E (0.34) ALDH1A1GAATDP1LMNASMN1; SMN2
SCHEMBL4608572 0.69 KDM4E (0.38) ALDH1A1GAATDP1LMNAEPHX2
SCHEMBL6251185 0.68 ALDH1A1 (0.41) ALDH1A1GAATDP1HPGDLMNA
SCHEMBL11219160 0.68 LMNA (0.35) HPGDLMNASMN1; SMN2KMT2APOLB
SCHEMBL7184444 0.67 HPGD (0.42) ALDH1A1HPGDLMNASMN1; SMN2KMT2A
SCHEMBL8340662 0.67 ALDH1A1 (0.48) ALDH1A1GAATDP1LMNAEPHX2
SCHEMBL6496658 0.67 KDM4E (0.46) ALDH1A1GAATDP1HPGDLMNA
SCHEMBL1088788 0.66 NPC1 (0.36) ALDH1A1GAATDP1LMNAEPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0921439-B1 Photosensitive polymer and chemically amplified resist composition using the same SAMSUNG ELECTRONICS CO LTD (KR) 2004-03-03 EP disclosed
US-6300036-B1 COPOLYMER OF MALEIC ANHYDRIDE AND 2-NORBORNENE-5-METHANOL DERIVATIVE; ACCURATE PATTERNS WHEN EXPOSED TO ARGON FLUORIDE LASERS; DRY ETCHING RESISTANCE SAMSUNG ELECTRONICS CO., LTD. (KR) 2001-10-09 US disclosed
US-6143465-A Photosensitive polymer having cyclic backbone and resist composition comprising same SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-11-07 US disclosed
US-6103450-A Photosensitive polymer, dissolution inhibitor and chemically amplified photoresist composition containing the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2000-08-15 US disclosed
EP-0921439-A1 Photosensitive polymer and chemically amplified resist composition using the same Samsung Electronics Co., Ltd. (KR) 1999-06-09 EP disclosed