SCHEMBL6562705

SCHEMBL6562705

CC(C)(C)CCOc1ccc(-c2ccc(-c3ccccc3)cc2)cc1

nearest known ligand 0.56

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LSS P48449 1/20 0.56
CHRNB2 P17787 1/20 0.53
CHRNB4 P30926 1/20 0.53
CHRNA3 P32297 1/20 0.53
CHRNA7 P36544 1/20 0.53
CHRNA4 P43681 1/20 0.53
HDAC1 Q13547 7/20 0.50
HDAC2 Q92769 7/20 0.50
NPC1 O15118 2/20 0.49
LMNA P02545 1/20 0.49
MAPT P10636 1/20 0.49
CASP3 P42574 1/20 0.49
SENP8 Q96LD8 1/20 0.49
SENP7 Q9BQF6 1/20 0.49
SENP6 Q9GZR1 1/20 0.49
LTA4H P09960 1/20 0.49
RAB9A P51151 2/20 0.47
MAPK1 P28482 1/20 0.47
HRH3 Q9Y5N1 4/20 0.47
MMP3 P08254 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13301359 1.00 LSS (0.56) LSSCHRNB2CHRNB4CHRNA3CHRNA7
SCHEMBL1754085 0.88 KCNA3 (0.58) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL14524692 0.85 SMN1; SMN2 (0.47) LTA4HHDAC6
SCHEMBL12958258 0.84 LTA4H (0.53) HDAC1HDAC2LTA4HHRH3
SCHEMBL13301365 0.83 ALDH1A1 (0.53) CHRNA7MAPTLTA4HHRH1
SCHEMBL10803113 0.81 LSS (0.64) LSSCHRNB2CHRNB4CHRNA3CHRNA7
SCHEMBL3073978 0.80 MMP2 (0.41) LSSHDAC1HDAC2HRH3MMP3
SCHEMBL2601695 0.80 PPARA (0.42) LSSLTA4H
SCHEMBL7462021 0.80 NPC1 (0.51) LSSCHRNB2CHRNB4CHRNA3CHRNA7
SCHEMBL15672914 0.79 KCNA3 (0.64) LSSCHRNB2CHRNB4CHRNA3CHRNA7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6806019-B2 COATING SUBSTRATES WITH PHOTORESIST MIXTURES COMPRISING NOVOLAKS, ACRYLIC ESTER COPOLYMERS AND PHOTOSENSITIZERS, THEN EXPOSING THE COATINGS AND DEVELOPING, TO FORM SEMICONDUCTORS OR FLAT PANEL DISPLAYS CLARIANT FINANCE (BVI) LIMITED (VG) 2004-10-19 US disclosed
US-20040170917-A1 Method of forming thick resist pattern AZ ELECTRONIC MATERIALS USA CORP. 2004-09-02 US disclosed
EP-1400850-A1 METHOD OF FORMING THICK RESIST PATTERN CLARIANT INTERNATIONAL LTD. (CH) 2004-03-24 EP disclosed
EP-1345081-A1 HIGH-RESOLUTION PHOTOSENSITIVE RESIN COMPOSITION USABLE WITH I-LINE AND METHOD OF FORMING PATTERN Clariant International Ltd. (CH) 2003-09-17 EP disclosed
US-6537719-B1 Both a resin and a photosensitive material, wherein a fluorescent material is incorporated CLARIANT FINANCE (BVI) LIMITED (VG) 2003-03-25 US disclosed
US-20030022093-A1 High-resolution photosensitive resin composition usable with i-line and method of forming pattern AZ ELECTRONIC MATERIALS USA CORP. 2003-01-30 US disclosed
EP-1126319-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD OF IMPROVING DRY ETCHING RESISTANCE OF PHOTOSENSITIVE RESIN COMPOSITION CLARIANT INTERNATIONAL LTD. (CH) 2001-08-22 EP disclosed
EP-1087260-A1 PHOTOSENSITIVE RESIN COMPOSITION CLARIANT INTERNATIONAL LTD. (CH) 2001-03-28 EP disclosed