⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28309518 | 0.81 | — | — | |
| SCHEMBL204327 | 0.75 | — | — | |
| SCHEMBL5162206 | 0.69 | LMNA (0.33) | — | |
| SCHEMBL2841796 | 0.67 | CRBN (0.32) | — | |
| SCHEMBL6759439 | 0.67 | CRBN (0.32) | — | |
| SCHEMBL13679922 | 0.67 | — | — | |
| SCHEMBL65633 | 0.65 | CAD (0.31) | — | |
| SCHEMBL11226210 | 0.64 | ALOX15 (0.31) | — | |
| SCHEMBL36898 | 0.64 | — | — | |
| SCHEMBL9014285 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 962 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3940747-B1 | NOVEL ETCHING PATTERN FORMING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS | YOUNG CHANG CHEMICAL CO LTD (KR) | 2026-05-06 | — | — | EP | claimed |
| US-20230350293-A1 | I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2023-11-02 | — | — | US | claimed |
| EP-4220301-A1 | I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN | Young Chang Chemical Co., Ltd. (KR) | 2023-08-02 | — | — | EP | claimed |
| US-11586109-B2 | Chemically-amplified-type negative-type photoresist composition | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2023-02-21 | — | — | US | claimed |
| CN-109154776-B | Chemically amplified negative photoresist composition | 荣昌化学制品株式会社 | 2022-06-28 | — | — | CN | claimed |
| US-20220172955-A1 | NOVEL ETCHING PATTERN FORMING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2022-06-02 | — | — | US | claimed |
| EP-3435160-B1 | NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO | YOUNG CHANG CHEMICAL CO LTD (KR) | 2022-05-04 | — | — | EP | claimed |
| WO-2022065713-A1 | I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN | 영창케미칼 주식회사 | 2022-03-31 | — | — | WO | claimed |
| EP-3940747-A1 | NOVEL ETCHING PATTERN FORMING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS | Young Chang Chemical Co., Ltd. (KR) | 2022-01-19 | — | — | EP | claimed |
| CN-113557592-A | Novel method for forming etching pattern in semiconductor manufacturing process | 荣昌化学制品株式会社 | 2021-10-26 | — | — | CN | claimed |
| US-20190137871-A1 | CHEMICALLY-AMPLIFIED-TYPE NEGATIVE-TYPE PHOTORESIST COMPOSITION | YCCHEM CO., LTD. (KR) | 2019-05-09 | — | — | US | claimed |
| US-20190101827-A1 | NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO | YCCHEM CO., LTD. (KR) | 2019-04-04 | — | — | US | claimed |
| EP-3435160-A1 | NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER, HAVING HIGH RESOLUTION AND HIGH ASPECT RATIO | Young Chang Chemical Co., Ltd. (KR) | 2019-01-30 | — | — | EP | claimed |
| CN-109154776-A | Chemical amplifying type negative photoresist composition | 荣昌化学制品株式会社 | 2019-01-04 | — | — | CN | claimed |
| US-10162261-B2 | Negative photoresist composition for KrF laser for forming semiconductor patterns | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2018-12-25 | — | — | US | claimed |
| CN-109073973-A | KrF laser negative photoresist composition with high-resolution and high aspect ratio | 荣昌化学制品株式会社 | 2018-12-21 | — | — | CN | claimed |
| US-20180246404-A1 | I-LINE NEGATIVE TYPE PHOTORESIST COMPOSITION HAVING EXCELLENT ETCHING RESISTANCE | YCCHEM CO., LTD. (KR) | 2018-08-30 | — | — | US | claimed |
| US-20180203351-A1 | NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER FOR FORMING SEMICONDUCTOR PATTERNS | YCCHEM CO., LTD. (KR) | 2018-07-19 | — | — | US | claimed |
| CN-107924124-A | Negative photoresist composition for I-line with excellent etching resistance | 荣昌化学制品株式会社 | 2018-04-17 | — | — | CN | claimed |
| CN-107850841-A | Negative photoresist composition for KrF laser for forming semiconductor pattern | 荣昌化学制品株式会社 | 2018-03-27 | — | — | CN | claimed |