Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CAD | P27708 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL36898 | 0.69 | — | — | |
| SCHEMBL10899226 | 0.67 | — | — | |
| SCHEMBL867266 | 0.67 | — | — | |
| SCHEMBL11226218 | 0.65 | CAD (0.39) | CAD | |
| SCHEMBL65632 | 0.65 | — | — | |
| Methoxymethane SCHEMBL27630769 | 0.64 | CAD (0.35) | CAD | |
| SCHEMBL9293414 | 0.64 | POLB (0.39) | CAD | |
| SCHEMBL10571804 | 0.64 | CAD (0.32) | CAD | |
| SCHEMBL238196 | 0.64 | SLC1A3 (0.38) | CAD | |
| SCHEMBL11519590 | 0.64 | ALDH1A1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 887 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3940747-B1 | NOVEL ETCHING PATTERN FORMING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS | YOUNG CHANG CHEMICAL CO LTD (KR) | 2026-05-06 | — | — | EP | claimed |
| US-20230350293-A1 | I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2023-11-02 | — | — | US | claimed |
| EP-4220301-A1 | I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN | Young Chang Chemical Co., Ltd. (KR) | 2023-08-02 | — | — | EP | claimed |
| CN-109154776-B | Chemically amplified negative photoresist composition | 荣昌化学制品株式会社 | 2022-06-28 | — | — | CN | claimed |
| US-20220172955-A1 | NOVEL ETCHING PATTERN FORMING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2022-06-02 | — | — | US | claimed |
| WO-2022065713-A1 | I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR REDUCING HEIGHT DIFFERENCE BETWEEN CENTER AND EDGE AND REDUCING LER, AND I-LINE NEGATIVE PHOTORESIST COMPOSITION FOR IMPROVING PROCESS MARGIN | 영창케미칼 주식회사 | 2022-03-31 | — | — | WO | claimed |
| EP-3940747-A1 | NOVEL ETCHING PATTERN FORMING METHOD IN SEMICONDUCTOR MANUFACTURING PROCESS | Young Chang Chemical Co., Ltd. (KR) | 2022-01-19 | — | — | EP | claimed |
| CN-113557592-A | Novel method for forming etching pattern in semiconductor manufacturing process | 荣昌化学制品株式会社 | 2021-10-26 | — | — | CN | claimed |
| CN-109073973-B | Negative photoresist composition for KrF laser with high resolution and high aspect ratio | 荣昌化学制品株式会社 | 2021-09-28 | — | — | CN | claimed |
| CN-107850841-B | Negative photoresist composition for KrF laser for forming semiconductor pattern | 荣昌化学制品株式会社 | 2021-04-02 | — | — | CN | claimed |
| CN-107924124-B | Negative photoresist composition for I-line with excellent etching resistance | 荣昌化学制品株式会社 | 2020-12-15 | — | — | CN | claimed |
| CN-109154776-A | Chemical amplifying type negative photoresist composition | 荣昌化学制品株式会社 | 2019-01-04 | — | — | CN | claimed |
| US-10162261-B2 | Negative photoresist composition for KrF laser for forming semiconductor patterns | YOUNG CHANG CHEMICAL CO., LTD (KR) | 2018-12-25 | — | — | US | claimed |
| CN-109073973-A | KrF laser negative photoresist composition with high-resolution and high aspect ratio | 荣昌化学制品株式会社 | 2018-12-21 | — | — | CN | claimed |
| US-20180246404-A1 | I-LINE NEGATIVE TYPE PHOTORESIST COMPOSITION HAVING EXCELLENT ETCHING RESISTANCE | YCCHEM CO., LTD. (KR) | 2018-08-30 | — | — | US | claimed |
| US-20180203351-A1 | NEGATIVE PHOTORESIST COMPOSITION FOR KRF LASER FOR FORMING SEMICONDUCTOR PATTERNS | YCCHEM CO., LTD. (KR) | 2018-07-19 | — | — | US | claimed |
| CN-107924124-A | Negative photoresist composition for I-line with excellent etching resistance | 荣昌化学制品株式会社 | 2018-04-17 | — | — | CN | claimed |
| CN-107850841-A | Negative photoresist composition for KrF laser for forming semiconductor pattern | 荣昌化学制品株式会社 | 2018-03-27 | — | — | CN | claimed |
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | ADEKA CORPORATION (JP) | 2026-05-28 | — | — | US | disclosed |
| EP-0823661-A1 | Composition for anti-reflective coating material | FUJI PHOTO FILM CO., LTD. (JP) | 1998-02-11 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260146026-A1 | COMPOUND, COMPOSITION, CURED PRODUCT, METHOD FOR PRODUCING CURED PRODUCT, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT | CBR3, CBR1, NOTUM | CAD 1311/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.