Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KMT2A | Q03164 | 3/20 | 0.55 |
| ▸ | TSHR | P16473 | 1/20 | 0.55 |
| ▸ | MEN1 | O00255 | 2/20 | 0.42 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.42 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.39 |
| ▸ | PARL | Q9H300 | 2/20 | 0.38 |
| ▸ | BRD4 | O60885 | 3/20 | 0.37 |
| ▸ | PKM | P14618 | 1/20 | 0.36 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13495371 | 0.81 | KMT2A (0.62) | KMT2ATSHRMEN1SMN1; SMN2L3MBTL1 | |
| SCHEMBL10402210 | 0.75 | KMT2A (0.51) | KMT2ATSHRMEN1L3MBTL1PKM | |
| SCHEMBL65808 | 0.74 | KMT2A (0.57) | KMT2ATSHRMEN1SMN1; SMN2L3MBTL1 | |
| SCHEMBL28933378 | 0.73 | KMT2A (0.56) | KMT2ATSHRMEN1SMN1; SMN2L3MBTL1 | |
| SCHEMBL15264731 | 0.72 | KMT2A (0.51) | KMT2ATSHRMEN1SMN1; SMN2L3MBTL1 | |
| Phensuximide SCHEMBL35334 | 0.72 | KMT2A (1.00) | KMT2ATSHRMEN1SMN1; SMN2L3MBTL1 | |
| Phensuximide SCHEMBL35333 | 0.72 | KMT2A (1.00) | KMT2ATSHRMEN1SMN1; SMN2L3MBTL1 | |
| Benzene SCHEMBL28164184 | 0.69 | PARL (0.60) | KMT2ASMN1; SMN2PARLKDM4E | |
| SCHEMBL2924606 | 0.68 | KMT2A (0.62) | KMT2ATSHRMEN1SMN1; SMN2L3MBTL1 | |
| SCHEMBL7000477 | 0.68 | KMT2A (0.62) | KMT2ATSHRMEN1SMN1; SMN2L3MBTL1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 473 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| EP-3266759-B1 | COMPOUND, RESIN, MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY, PATTERN FORMING METHOD, AND METHOD FOR PURIFYING COMPOUND OR RESIN | MITSUBISHI GAS CHEMICAL CO (JP) | 2023-09-13 | — | — | EP | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| EP-2384457-B1 | COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-06 | — | — | EP | disclosed |
| CN-108693713-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2022-06-03 | — | — | CN | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| CN-106103396-B | Compound, resin, material for forming underlayer film for lithography, pattern formation method, and method for purifying compound or resin | 三菱瓦斯化学株式会社 | 2021-11-30 | — | — | CN | disclosed |
| CN-107949808-B | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, and method for producing same | 三菱瓦斯化学株式会社 | 2021-10-22 | — | — | CN | disclosed |
| US-6284429-B1 | FOR FORMULATING PHOTORESISTS HAVING SENSITIVITY, RESOLUTION, ETCHING RESISTANCE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-09-04 | — | — | US | disclosed |
| US-6280898-B1 | PHOTORESISTS PATTERNS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-08-28 | — | — | US | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1096317-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | KMT2A 536/4885TSHR 2827/4885MEN1 4037/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | KMT2A 633/4885TSHR 1292/4885MEN1 1512/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | KMT2A 633/4885TSHR 1292/4885MEN1 1512/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.